Mr. John chang
Model No.: YZPST-R2619ZC21J
Brand: YZPST
Type: Intrinsic Semiconductor
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
YZPST-R2619ZC21J
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
VRRM (1) VDRM (1) VRSM (1) 2100 2100 2200
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM | 20 mA 200 mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 200 V/msec |
Conducting - on state
Parameter Symbol Min. Max. Typ. Units Conditions Average value of on-state current IT(AV)M 2619 A Sinewave,180o conduction,Tc=55oC RMS value of on-state current ITRMS 5227 A Nominal value Peak one cPSTCle surge (non repetitive) current ITSM 33.8 37.2 kA kA 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC I square t I2t 5.71x106 A2s 8.3 msec Latching current IL - mA VD = 24 V; RL= 12 ohms Holding current IH 1000 mA VD = 24 V; I =2.5 A Peak on-state voltage VTM 2.3 V ITM = 4000 A Critical rate of rise of on-state current (5, 6) di/dt 1500 A/ms Switching from VDRM £ 1000 V, non-repetitive Critical rate of rise of on-state current (6) di/dt 1000 A/ms Switching from VDRM £ 1000 V
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 30 |
| W |
|
| Average gate power dissipation | PG(AV) |
| 5 |
| W |
|
| Peak gate current | IGM |
| - |
| A |
|
| Gate current required to trigger all units | IGT |
| 300 |
| mA | VD = 10 V;IT=3A;Tj = +25 oC
|
| Gate voltage required to trigger all units
| VGT |
| 3 |
| V
| VD = 10 V;IT=3A;Tj = +25 oC
|
| Peak negative voltage | VRGM |
| 5 |
| V |
|
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | tgd |
| - | 0.8 | ms | VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
| Turn-on time | tgt |
| - | 1.5 |
| |
| Turn-off time (with VR = -5 V) | tq |
| - | 50 | ms | ITM=4000A, tp=2000us, di/dt=60A/us, Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/us |
| Reverse recovery current | Irm |
| - |
| A | ITM=4000A, tp=2000us, di/dt=60A/us |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
| Storage temperature | Tstg | -40 | +150 |
| oC |
|
| Thermal resistance - junction to case | RQ (j-c) |
| - - |
| K/kW | Double sided cooled Single sided cooled |
| Thermal resistamce - case to sink | RQ (c-s) |
| - - |
| K/kW | Double sided cooled * Single sided cooled * |
| Thermal resistamce - junction to sink | RQ (c-s) |
| 11 22 |
| K/kW | Double sided cooled * Single sided cooled * |
| Mounting force | F | 27 | 47 | - | kN |
|
| Weight | W |
|
| 1.7 | Kg | about |
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data
| Sym | A | B | C | D | H |
| mm | 109 | 73 | 98 | 3.5×3 | 35±1 |
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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