Mr. John chang
Model No.: YZPST-KP1000A6500V
Brand: YZPST
Place Of Origin: China
VRRM: 6500V
VDRM: 6500V
IRRM: 40 mA
IDRM: 200mA
DV/dt: 1000 V/μsec
IT(AV): 1000A
ITRMS: 1650A
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 10000000
Transportation: Ocean,Land,Express,Others
Place of Origin: CHINA
Supply Ability: 10000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
P/N:YZPST-KP1000A/6500V
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
Features:
. All Diffused Structure
. Center Amplifying Gate Configuration
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
Blocking - Off State
| VRRM ( 1) | V DRM ( 1) | VRSM ( 1) |
| 6500 | 6500 | 6600 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in
accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addi- tion to that obtained from a snubber circuit,comprising a 0.2 μF capacitor and 20 ohms resistance in parallel with the thristor
under test.
| Repetitive peak reverse leakage and off state | IRRM / IDRM | 40 mA 200mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 1000 V/μsec |
Conducting - on state
Parameter Symbol Min. Max. Typ. Units Conditions Max. Average value of on-state current IT(AV) 1000 A Sinewave, 180o conduction TC=70 oC RMS value of on-state current ITRMS 1650 A Nominal value Peak one cpstcle surge ITSM 18 kA 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC (non repetitive) current I square t I2t 1620 kA2s Latching current IL 1500 mA VD = 24 V; RL= 12 ohms Holding current IH 500 mA VD = 24 V; I = 2.5 A Peak on-state voltage VTM 2.65 V ITM = 1000A; Tvj= 125℃ Threshold voltage VTo 1.24 V Tvj= 125℃ Slope resistance rT 1.01 mΩ Tvj= 125℃ Critical rate of rise of on-state current (5, 6) di/dt 500 A/μs Switching from VDRM < 1500 V, non-repetitive Critical rate of rise of on-state current (6) di/dt - A/μs Switching from VDRM < 3500 V
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 50 |
| W | tp = 40 us |
| Average gate power dissipation | PG(AV) |
| 10 |
| W |
|
| Peak gate current | IGM |
| 10 |
| A |
|
| Gate current required to trigger all units | IGT |
| 400 |
| mA mA mA | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
| Gate voltage required to trigger all units |
VGT |
| - 2.6 - |
| V V V | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0- 125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
| Peak negative voltage | VGRM |
| 10 |
| V |
|
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | td |
|
- |
|
μs | ITM = 1000 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0. 1 μs; tp = 20 μs |
|
Turn-off time (with VR = -50 V) |
tq |
|
700 |
|
μs | ITM = 1000 A; di/dt = 1A/μs; VR > 200 V; Re-applied dV/dt = 20 V/μs linear to 67% VDRM; VG = 0; Tj = 125 oC; Duty cpstcle > 0.01% |
| Reverse recovery charge | Qrr |
| - |
| μAs | ITM = 2000 A; di/dt = 1.5 A/μs; VR > 200V |
CASE OUTLINE AND DIMENSIONS.
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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