Mr. John chang
Model No.: YZPST-5STP24L2800
Brand: YZPST
Transportation: Ocean,Air
Place of Origin: CHINA
Certificate: ISO9000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
High Power Thyristor Phase Control
YZPST-5STP24L2800
HIGH POWER THYRISTOR FOR PHASE CONTROL FEATURES AND APPLICATIONS
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
Conducting - on state
Parameter Symbol Min. Max. Typ. Units Conditions Average value of on-state current IT(AV)M 2400 A Sinewave,180o conduction,T =85oC c RMS value of on-state current ITRMSM 4120 A Nominal value Peak one cPSTCle surge (non repetitive) current ITSM 46 43 kA kA 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC I square t I2t 8.7x106 A2s 8.3 msec Latching current IL 200 mA VD = 24 V; RL= 12 ohms Holding current IH 75 mA VD = 24 V; I = 2.5 A Peak on-state voltage VTM 1.35 V I = 3000 A; T = 125 oC TM j Threshold vlotage VT0 0.85 V Slope resistance rT 0.16 mΩ Critical rate of rise of on-state current (5, 6) di/dt 300 A/ s Switching from VDRM 1000 V, non-repetitive Critical rate of rise of on-state current (6) di/dt 150 A/ s Switching from VDRM 1000 V
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| - |
| W |
|
|
Average gate power dissipation |
PG(AV) |
|
- |
|
W |
|
| Peak gate current | IGM |
| - |
| A |
|
| Gate current required to trigger all units |
IGT |
|
400 |
|
mA | V = 10 V;I =3A;T = +25 oC D T j |
| Gate voltage required to trigger all units |
VGT |
|
2.6 |
|
V |
V = 10 V;I =3A;T = +25 oC D T j |
|
Peak negative voltage |
VRGM |
|
- |
|
V |
|
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | tgd |
| 3 | - | s | VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
| Turn-on time | tgt |
| - | - |
| |
|
Turn-off time (with VR = -5 V) |
tq |
- |
- |
400 |
s | ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us |
|
Reverse recovery current |
Irm |
|
- |
|
A | ITM=4000A, tp=2000us, di/dt=60A/us |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
|
Storage temperature |
Tstg |
-40 |
+140 |
|
oC |
|
| Thermal resistance - junction to case |
R (j-c) |
| 10 20 |
|
K/kW | Double sided cooled * Single sided cooled * |
| Thermal resistamce - case to sink |
R (c-s) |
| 2 4 |
|
K/kW | Double sided cooled * Single sided cooled * |
| Thermal resistance - junction to case |
R (j-s) |
| - - |
|
K/kW | Double sided cooled * Single sided cooled * |
| Mounting force | F | 45 | 60 | 50 | kN |
|
| Weight | W |
|
| 0.9 | Kg | about |
Outline
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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