Mr. John chang
Model No.: YZPST-KP800A 1800V
Brand: YZPST
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
YZPST-KP800A1800V
Phase Control Thyristor 1900V is widely used in all kinds of electronic equipment and electronic products. It is used for controlled rectifier, inverter, frequency conversion, voltage regulation and contactless switch.Household electrical appliances in the dimming light, speed fan, air conditioner, TV sets, refrigerators, washing machines, cameras, combined sound, light and sound circuit, time controller, toy device, wireless remote control, camera, and the thyristor device is widely used in industrial control, etc.
| Thyristor | Ratings | ||||||
| Symbol | Definition | Conditions |
| min. | typ. | max. | Unit |
| V EQ \F(RSM,DSM) | max. non-repetitive reverse/forward blocking voltage | TJ = 25°C |
|
| 1900 | V | |
| V EQ \F(RRM,DRM) | max. repetitive reverse/forward blocking voltage | TJ = 25°C |
|
| 1800 | V | |
| VT | On-state voltage | IT=1500 A | TJ = 25°C |
|
| 1.70 | V |
| IT(AV) | average forward current | TC=25°C |
|
|
| 800 | A |
| IT(RMS) | RMS forward current | 180° sine |
|
|
| 2214 | A |
| RthJC | thermal resistance junction to case |
|
|
|
|
| K/W |
| RthCH | thermal resistance case to heatsink |
|
|
|
|
| K/W |
| RthJK | thermal resistance junction to heatsink |
|
|
|
| 0.032 | K/W |
| ITSM | max. forward surge current | t = 10 ms; (50 Hz), sine | TJ = 25°C |
|
| 12.7 | kA |
| I²t | value for fusing | t = 10 ms; (50 Hz), sine | TJ = 25°C |
|
| 806 | kA²s |
| di/dt | Rate of rise of on-state current | TJ = 125°C; f = 50 Hz tP=200µs;diG/dt=0.15A/µs; IG=0.15A;VD= ⅔VDRM | repetitive |
|
| 500 | A/µs |
| non-repet |
|
| 1000 | A/µs | |||
| dv/dt | Maximum linear rate of rise of off-state voltage | VD= ⅔VDRM RGK =∞; method 1 (linear voltage rise) | TJ = 125°C |
|
| 1000 | V/µs |
| VGT | gate trigger voltage | VD = 6V | TJ = 25°C |
|
| 3.0 | V |
| IGT | gate trigger current | VD = 6V | TJ = 25°C |
|
| 300 | mA |
| IL | latching current |
| TJ = 25°C |
|
|
| A |
| IH | holding current |
| TJ = 25°C |
|
| 500 | mA |
| tgd | gate controlled delay time |
| TJ = 25°C |
|
| 2.5 | µs |
| tq | Turn-off time | VR=10 V; IT=20A; VD=⅔VDRM | TJ = 150°C |
| 200 | 400 | µs |
| Tstg | storage temperature |
|
| -40 |
| 125 | °C |
| TJ | virtual junction temperature |
|
| -40 |
| 125 | °C |
| Wt | Weight |
|
|
|
|
| g |
| F | mounting force |
|
| 10 |
| 20 | kN |
Outline Drawing
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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