Mr. John chang
Model No.: YZPST-KK2000A4000V
Brand: YZPST
Type: Intrinsic Semiconductor
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
YZPST-KK2000A4000V
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
| Device Type | VRRM (1) | VDRM (1) | VRSM (1) |
| KK2000A | 4000 | 4000 | 4100 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM | 20 mA 200 mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 1000 V/msec |
Conducting - on state
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV) |
| 2000 |
| A | Sinewave,180o conduction,Tc=70oC |
| RMS value of on-state current | ITRMS |
| 3300 |
| A | Nominal value |
| Peak one cPSTCle surge (non repetitive) current |
ITSM |
| 42000
39000 |
| A
A | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 5.5x106 |
| A2s | 8.3 msec |
| Latching current | IL |
| 1000 |
| mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
|
500 |
| mA | VD = 24 V; I = 2.5 A |
| Peak on-state voltage | VTM |
|
2.60 |
| V | ITM = 2000 A; Tj = 125 oC |
| Critical rate of rise of on-state current (5, 6) | di/dt |
|
800 |
| A/ms | Switching from VDRM £ 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt |
|
300 |
| A/ms | Switching from VDRM £ 1000 V |
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 200 |
| W | tp = 40 us |
| Average gate power dissipation | PG(AV) |
| 5 |
| W |
|
| Peak gate current | IGM |
| 20 |
| A |
|
| Gate current required to trigger all units | IGT |
| 300 200 125 |
| mA mA mA | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
| Gate voltage required to trigger all units | VGT |
0.30 | 5 4 |
| V V V | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
| Peak negative voltage | VGRM |
| 20 |
| V |
|
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions | |
| Delay time | td |
|
|
2.0 |
| ms | ITM = 50 A; VD = 67% VDRM Gate pulse: VG = 30 V; RG = 10 ohms; tr = 0.1 ms; tp = 20 ms |
| Turn-off time (with VR = -5 V) | tq |
|
|
100 |
| ms | ITM > 2000 A; di/dt = 25 A/ms; VR ³ -5 V; Re-applied dV/dt = 400 V/ms linear to 67% VDRM ; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
| Reverse recovery current | Irr |
|
200 |
|
| A | ITM > 2000 A; di/dt = 25 A/ms; VR ³ -50 V; Tj = 125 oC |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
| Storage temperature | Tstg | -40 | +150 |
| oC |
|
| Thermal resistance - junction to case | RQ (j-c) |
| 0.012 |
| o C/W | Double sided cooled Single sided cooled |
| Thermal resistamce - case to sink | RQ (c-s) |
| 0.002 |
| o C/W | Double sided cooled * Single sided cooled * |
| Mounting force | P | 8000 35.5 | 10000 44.4 |
| lb. kN |
|
| Weight | W |
|
| 3.5 1.60 | Lb. Kg. |
|
* Mounting surfaces smooth, flat an Greased
Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data
| A: | 84 | mm |
| B: | 118 | mm |
| C: | 108 | mm |
| E: | 36 | mm |
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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