Mr. John chang
Model No.: YZPST-DCR504
Brand: YZPST
Transportation: Ocean,Air
Certificate: ISO9000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
High Power Thyristor Phase Control
YZPST-DCR504
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV) |
| 300 |
| A | Sinewave,180o conduction,Tc=65oC |
| RMS value of on-state current | ITRMS |
| 480 |
| A | Nominal value |
| Peak one cycle surge (non repetitive) current |
ITSM |
| 4200
4400 |
| A
A | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 68000 |
| A2s | 8.3 msec |
| Latching current | IL |
|
| 300 | mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
|
| 200 | mA | VD = 24 V; I = 2.5 A |
| Peak on-state voltage | VTM |
| 2.98 |
| V | ITM = 1500 A; Tj = 25 oC |
| Critical rate of rise of on-state current (5, 6) | di/dt |
| 300 |
| A/ms | Switching from VDRM£ 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt |
| 150 |
| A/ms | Switching from VDRM£ 1000 V |
ELECTRICAL CHARACTERISTICS AND RATINGS Gating Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 10 |
| W | tp = 40 us |
| Average gate power dissipation | PG(AV) |
| 2 |
| W |
|
| Peak gate current | IGM |
| 3 |
| A |
|
| Gate current required to trigger all units | IGT |
| 200 150 125 |
| mA mA mA | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
| Gate voltage required to trigger all units
| VGT |
0.30 | 3 2.5
|
| V V V | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
| Peak negative voltage | VGRM |
| 5 |
| V |
|
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | td |
| 1.0 |
| ms | ITM = 100 A; VD = VDRM Gate pulse: VG = 10 V; RG = 25 ohms; tr = 0.1 ms; tp = 20 ms |
| Turn-off time (with VR = -50 V) | tq |
| 200
|
| ms | ITM > 250 A; di/dt = 10 A/ms; VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to VDRM ; Tj = 125 oC; Duty cycle ³ 0.01% |
| Reverse recovery charge | Qrrr |
| 200 |
| mCb | ITM > 400 A; di/dt = 10 A/ms; |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
| Storage temperature | Tstg | -40 | +150 |
| oC |
|
| Thermal resistance - junction to case | RQ (j-c) |
| 0.095 |
| oC/W | Double sided cooled |
| Thermal resistamce - case to sink | RQ (c-s) |
| 0.06 |
| oC/W | Double sided cooled * |
| Mounting force | P | 3.2 | 3.9 |
| kN |
|
| Weight | W |
|
| 57 | g. |
|
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data
CASE OUTLINE AND DIMENSIONS.
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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