Mr. John chang
Model No.: YZPST-N330CH26
Brand: YZPST
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
High Current Thyristor Applications
YZPST-N330CH26
HIGH POWER THYRISTOR 3000V OF Features:. Interdigitated Amplifying Gate Configuration . High dV/dt Capability
. Guaranteed Maximum Turn-Off Time . Pressure Assembled Device
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
| VRRM (1) | VDRM (1) | VRSM (1) |
| 3000 | 3000 | 3100 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM | 20 mA 100 mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 1000 V/msec |
Notes:
All ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section 5-2-2-6. The value defined would be in addition to that obtained from a ubber circuit,comprising a 0.2 F capacitor and 20 ohmsresistance in parallel with the thristor under test.
Conducting - on state
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV) |
| 1132 |
| A | Sinewave,180o conduction,Tc=55oC |
| RMS value of on-state current | ITRMS |
| 2228 |
| A | Nominal value |
| Peak one cPSTCle surge (non repetitive) current |
ITSM |
| -
14.3 |
| kA
kA | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 1.02x106 |
| A2s | 8.3 msec |
| Latching current | IL |
| - |
| mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
| 1000 |
| mA | VD = 24 V; I = 2.5 A |
| Peak on-state voltage | VTM |
| 2.08 |
| V | ITM = 1830 A |
| Critical rate of rise of on-state current (5, 6) | di/dt |
| 400 |
| A/ms | Switching from VDRM £ 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt |
| 200 |
| A/ms | Switching from VDRM £ 1000 V |
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 30 |
| W |
|
| Average gate power dissipation | PG(AV) |
| 4 |
| W |
|
| Peak gate current | IGM |
| - |
| A |
|
| Gate current required to trigger all units | IGT |
| 300 |
| mA | VD = 10 V;IT=3A;Tj = +25 oC
|
| Gate voltage required to trigger all units
| VGT |
| 3.0 |
| V
| VD = 10 V;IT=3A;Tj = +25 oC
|
| Peak negative voltage | VRGM |
| 5 |
| V |
|
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | tgd |
| 1.0 | - | ms | VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
| Turn-on time | tgt |
| 2.0 | - |
| |
| Turn-off time (with VR = -5 V) | tq | - | - | 400 | ms | ITM=1000A, tp=1000us, di/dt=10A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us |
| Reverse recovery current | Irm |
| - |
| A | ITM=4000A, tp=2000us, di/dt=60A/us |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
| Storage temperature | Tstg | -40 | +150 |
| oC |
|
| Thermal resistance - junction to case | RQ (j-c) |
| - - |
| K/kW | Double sided cooled Single sided cooled |
| Thermal resistamce - case to sink | RQ (c-s) |
| - - |
| K/kW | Double sided cooled * Single sided cooled * |
| Thermal resistance - junction to case | RQ (j-s) |
| 24 48 |
| K/kW | Double sided cooled Single sided cooled |
| Mounting force | F | 19 | 26 | - | kN |
|
| Weight | W |
|
| - | Kg | about |
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
