Mr. John chang
Model No.: YZPST-N1042LS18
Brand: YZPST
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Features: Interdigitated Amplifying Gate Configuration. High dV/dt Capability. Pressure Assembled Device. All Diffused Structure. Guaranteed Maximum Turn-Off Time.
Conducting - on state
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Max. average value of on-state current | IT(AV)M |
| 1042 |
| A | Sinewave,180o conduction,Tc=55oC |
| RMS value of on-state current | IT(RMS)M |
| 2072 |
| A | Nominal value |
| Peak one cPSTCle surge (non repetitive) current |
ITSM |
| -
11.52 |
| kA
kA | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 661x103 |
| A2s | 8.3 msec |
| Latching current | IL |
| - |
| mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
| - |
| mA | VD = 24 V; I = 2.5 A |
| Peak on-state voltage | VTM |
| 1.75 |
| V | ITM = 1700 A |
| Critical rate of rise of on-state current (5, 6) | di/dt |
| 1000 |
| A/ms | Switching from VDRM £ 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt |
| 500 |
| A/ms | Switching from VDRM £ 1000 V |
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 30 |
| W |
|
| Average gate power dissipation | PG(AV) |
| 4 |
| W |
|
| Peak gate current | IGM |
| - |
| A |
|
| Gate current required to trigger all units | IGT |
| 300 |
| mA | VD = 10 V;IT=3A;Tj = +25 oC
|
| Gate voltage required to trigger all units
| VGT |
| 3.0 |
| V
| VD = 10 V;IT=3A;Tj = +25 oC
|
| Peak negative voltage | VRGM |
| 5 |
| V |
|
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | tgd |
| - | - | ms | VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
| Turn-on time | tgt |
| - | - |
| |
| Turn-off time (with VR = -5 V) | tq | - | - | - | ms | ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us |
| Reverse recovery current | Irm | - | - | - | A | ITM=4000A, tp=2000us, di/dt=60A/us |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
| Storage temperature | Tstg | -40 | +150 |
| oC |
|
| Thermal resistance - junction to case | RQ (j-c) |
| - - |
| K/kW | Double sided cooled Single sided cooled |
| Thermal resistamce - case to sink | RQ (c-s) |
| - - |
| K/kW | Double sided cooled * Single sided cooled * |
| Thermal resistance - junction to case | RQ (j-s) |
| 32 64 |
| K/kW | Double sided cooled Single sided cooled |
| Mounting force | F | 10 | 20 | - | kN |
|
| Weight | W |
|
| - | Kg | about |
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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