Mr. John chang
Model No.: YZPST-450B120E53
Brand: YZPST
VCES: 1200V
IC: 450m
ICRM: 900m
VGES: ±20V
Ptot: 3000W
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
YZPST-450B120E53
Applications
Fnaturns
Low Vce(sat) with SPT+ technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low inductance module structure
Absolute MaxMmum RatMn
| Parameter | Symbol | CondMtMons | Value | UnMt |
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mm, Tvj=25℃ | 1200 | V |
| Continuous Collector Current | IC | Tc=100℃ | 450 | m |
| Peak Collector Current | ICRM | ICRM =2IC | 900 | m |
| Gate-Emitter Voltage | VGES | Tvj=25℃ | ±20 | V |
| Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25℃ Tvjmax=175℃ | 3000 | W |
IGBT CharacterMstMcs
|
Parameter |
Symbol |
CondMtMons |
Value |
UnMt | ||
| MMn. | Typ. | Max. |
| |||
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =3mm,Tvj=25℃ | 5.0 | 6.2 | 7.0 | V |
|
Collector-Emitter Cut-off Current |
ICES | VCE=1200V,VGE=0V, Tvj=25℃ |
|
| 1.0 | mm |
| VCE=1200V,VGE=0V, Tvj=125℃ |
|
| 5.0 | mm | ||
| Collector-Emitter Saturation Voltage |
VCE(sat) | Ic=450m,VGE=15V, Tvj=25℃ |
| 1.85 |
| V |
| Ic=450m,VGE=15V, Tvj=125℃ |
| 2.05 |
| V | ||
| Input Capacitance | Cies |
VCE=25V,VGE =0V, f=1MHz, Tvj=25℃ |
| 31.8 |
| nF |
| Output Capacitance | Coes |
| 2.13 |
| nF | |
| Reverse Transfer Capacitance | Cres |
| 1.48 |
| nF | |
| Internal Gate Resistance | Rgint |
|
| 0.7 |
| Ω |
| Turn-on Delay Time | td(on) |
IC =450 m VCE = 600 V VGE = ±15V RG =3.3Ω Tvj=25℃ |
| 320 |
| ns |
| Rise Time | tr |
| 165 |
| ns | |
| Turn-off Delay Time | td(off) |
| 650 |
| ns | |
| Fall Time | tf |
| 124 |
| ns | |
| Energy Dissipation During Turn-on Time | Eon |
| 35 |
| mJ | |
| Energy Dissipation During Turn-off Time | Eoff |
| 42 |
| mJ | |
| Turn-on Delay Time | td(on) |
IC =450m VCE = 600 V VGE = ±15V RG =3.3Ω Tvj=125℃ |
| 350 |
| ns |
| Rise Time | tr |
| 193 |
| ns | |
| Turn-off Delay Time | td(off) |
| 720 |
| ns | |
| Fall Time | tf |
| 156 |
| ns | |
| Energy Dissipation During Turn-on Time | Eon |
| 55 |
| mJ | |
| Energy Dissipation During Turn-off Time | Eoff |
| 64 |
| mJ | |
|
SC Data |
Isc | Tp≤10us,VGE=15V, Tvj=150℃,Vcc=600V, VCEM≤1200V |
|
2100 |
|
m |
Ÿ 
Package Dimensions
Product Categories : Semiconductor Module Devices > IGBT Module
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