Mr. John chang
Model No.: YZPST-230B170F62
Brand: YZPST
Place Of Origin: China
VDSmax: 1700V
ID Tc=25℃: 230A
ID Tc=100℃: 200A
VGSmax: -10V/+25V
VGSop: -5V/+20V
TJ TSTG: -40℃+155℃
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 10000
Transportation: Ocean,Land
Supply Ability: 10000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Ease of paralleling
Absolute Maximum Ratings (TC =25℃ unless otherwise specified)
| Parameter | ||||
| Symbol | Conditions | Value | Unit | |
| Drain-source voltage | VDSmax | 1700 | V | |
| VGS=20V, Tc=25℃ | 230 | |||
| Continuous collector current | ID | VGS=20V, Tc=100℃ | 200 | A |
| Gate- source voltage | VGSmax | Absolute maximum values | -10V/+25V | V |
| Gate-source voltage | VGSop | Recommended operational values | -5V/+20V | V |
| Operating Junction and Storage Temperature | TJ TSTG | -40~+155 | ℃ |
Electrical Characteristics (TC =25℃ unless otherwise specified)
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Gate threshold voltage | VGSth | ID =108mA | 2 | 2.6 | 4 | V |
| Zero gate voltage drain current | IDSS | VDS=1700V,VGS=0V | 6 | 600 | uA | |
| Gate-source leakage current | IGSS | VGS=20 V | 1500 | nA | ||
| VGS=20V, IDS=230A | 7.5 | 11.7 | ma | |||
| On state resistance | RDS(on) | VGS=20V, IDS=230A,Tvj=150℃ | 15 | ma | ||
| Input capacitance | Ciss | 21.3 | nF | |||
| Output capacitance | Coss | VGS=0V,VDS=1000V, VAC=25mV f=1MHz | 0.99 | nF | ||
| Reverse transfer capacitance | Crss | 0.04 | nF | |||
| Gate-source charge | QGS | 324 | nC | |||
| Gate-drain charge | QGD | VDS=1200V,VGS = +20V/-5V | 150 | nC | ||
| Total gate charge | QG | ID =300 A | 1158 | nC | ||
| Turn-on delay time | td(on) | 27 | ns | |||
| ID =180A | ||||||
| Rise time | tr | VDS =1200V | 32 | ns | ||
| Turn-off delay time | td(off) | VGS = +20V/-5V | 36 | ns | ||
| Fall time | tf | RG= 2.5a | 10 | ns | ||
| Energy dissipation during turn-on time | ID =180A | |||||
| Eon | VDS =1200V | 1.2 | mJ | |||
| VGS = +20V/-5V | ||||||
| RG= 2.5a | ||||||
| Energy dissipation during turn-off time | Eoff | L=200uH | 2 | mJ | ||
| IF=300A | 1.6 | 1.9 | V | |||
| Diode forward voltage | VSD | IF=300A,Tvj=150℃ | 2.2 | 2.8 | V | |
Module Characteristics (TC =25℃ unless otherwise specified)
| Parameter | Value | |||||
| Symbol | Conditions | Min. | Typ. | Max. | Unit | |
| Case isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
| Maximum junction temperature | Tjmax | 175 | ℃ | |||
| Operating junction temperature | Tvj op | -40 | 150 | ℃ | ||
| Storage temperature | Tstg | -40 | 125 | ℃ | ||
| Module electrodes torque | Mt | Recommended(M6) | 3 | 6 | ||
| Module to heatsink torque | Ms | Recommended(M6) | 3 | 6 | Nm | |
| Weight of module | G | 300 | g | |||
Circuit Diagram
Package Dimensions
Product Categories : Semiconductor Module Devices > IGBT Module
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