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Home > Products > Semiconductor Module Devices > IGBT Module > PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTC Moudle
  • PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTC Moudle
  • PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTC Moudle
  • PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTC Moudle
  • PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTC Moudle
  • PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTC Moudle

PIM with Trench Field-Stop IGBT, Emitter Controlled Diode and NTC Moudle

  • $38
    10-49
    Piece/Pieces
  • $31
    ≥50
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-P035PJE120AT1B

BrandYZPST

Place Of OriginChina

VCES1200V

VGES±20V

IC35A

CRM70A

Ptot172W

VcE(sat)2.15V

VgE(th5.6V

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Express,Air

Place of OriginCHINA

Supply Ability1000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example:
PIM with Trench Field-Stop lGBT, Emitter Controlled Diode and NTC
YZPST-P035PJE120AT1B
Features
Trench+Field Stop Technology
1200V Trench Field-Stop IGBT
LowVCE(sat)with Low Switching Losses
Applications
Frequency Coverters
Motor Drives
Auxiliary Inverters
YZPST-P035PJE120AT1B
Equivalent Circuit Schematic
Equivalent Circuit Schematic

IGBT-Inverter

Maximum Rated Values

 

Symbo

Description

Conditions

Values

Unit

VCES

Collector-Emitter Voltage

Ty=25℃

1200

V

VGEs

Gate-Emitter Peak Voltage

Ty=25℃

±20

V

Ic

Continuous DC Collector Current

Tc=100℃

35

A

CRM

Repetitive Peak Collector Current

tp=1ms

70

A

Ptot

Total Power Dissipation

Tc=25℃,Tyimax=175℃

172

W

Characteristic Values

 

 

Symbo

 

Description

 

Conditions

Values

 

Unit

Min

Typ.

Max.

VcE(sat)

Collector-Emitter Saturation Voltage

VGE=15V,Ic=35A,Ty=25℃

 

2.15

 

V

VGE=15V,Ic=35A,Tv=125℃

 

2.57

 

V

VgE(th

Gate Threshold Voltage

VGE=VcE,c=1.2mA

 

5.6

 

V

CES

Collector-Emitter Cut-Off Current

VcE=1200V,VGE=0V

 

 

1

mA

GES

Gate-Emitter Leakage Current

VGE=20V,VcE=0V

 

 

100

nA

Cies

Input Capacitance

 

VcE=25V,VGE=OV,f=1MHz

 

2590

 

pF

Coes

Output Capacitance

 

180

 

pF

Cres

Reverse Transfer Capacitance

 

86

 

pF

td(on)

Turn-on Delay Time

 

VcE=600V  VGF=±15V Ic=35A

Rg=120

Inductive Load Ty=25℃

 

34

 

ns

t

Turn-on Rise Time

 

20

 

ns

td(off)

Turn-off Delay Time

 

230

 

ns

t

Turn-off Fall Time

 

160

 

ns

Eon

Turn-on Switching Loss

 

2.5

 

mJ

Eoff

Turn-off Switching Loss

 

2.5

 

mJ

lsc

Short Circuit Data

VGE≤15V,Vcc=800V  tp≤10μs,Tv=150℃

 

151

 

A

RthJC

Thermal Resistance,Junction to Case

Per IGBT

 

 

0.87

K/W

Tw OF

Virtual JunctionTemperature

Under Switching

-40

 

150

Package Outlines (mm)
P035PJE120AT1B Outline
 

Product Categories : Semiconductor Module Devices > IGBT Module

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