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Home > Products > Semiconductor Module Devices > IGBT Module > 1700V 600A Single Switches 62mm single module

1700V 600A Single Switches 62mm single module

  • $73
    10-49
    Piece/Pieces
  • $52
    ≥50
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-FZ600R17KE4

BrandYZPST

Place Of OriginChina

IC TC=100°C600A

VCES1700V

VGES±30V

IC TC=25°C1200A

PD2660W

Tsc>10µs

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability100000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
P/N:YZPST-FZ600R17KE4
1700V/600ASingle Switches
Features:
1700V600A,VCE(sat)(typ.)=3.0V
Ultrafast switching speed
Excellent short circuit ruggedness
62mm single module
 
General Applications:
Daxin’s IGBTs offer ultrafast switching speed for application such as welding, inductive
heating, UPS and other high frequency applications
YZPST-FZ600R17KE4 module

Absolute Maximum Ratings of IGBT

VCES

Collector to Emitter Voltage

1700

V

VGES

Continuous Gate to Emitter Voltage

±30

V

 

IC

 

Continuous Collector Current

TC  = 25°C

1200

 

A

TC  = 100°C

600

ICM

Pulse Collector Current

TJ  = 150°C

1200

A

PD

Maximum Power Dissipation (IGBT)

TC  = 25°C, TJ  = 150°C

2660

W

tsc

Short Circuit Withstand Time

> 10

µs

TJ

Maximum IGBT Junction Temperature

150

°C

TJOP

Maximum Operating Junction Temperature Range

-40 to +150

°C

Tstg

Storage Temperature Range

-40 to +125

°C

Absolute Maximum Ratings of Freewheeling Diode

VRRM

Repetitive Peak Reverse Voltage Preliminary Data

1700

V

 

IF

 

Diode Continuous Forward Current

TC  = 25°C

1200

 

A

TC  = 100°C

600

IFM

Diode Maximum Forward Current

1200

A

 

Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)

Parameter

Test Conditions

Min

Typ

Max

Unit

BVCES

Collector to Emitter Breakdown Voltage

VGE = 0V, IC = 1mA

1700

 

 

V

ICES

Collector to Emitter Leakage  Current

VGE  = 0V,VCE    = VCES

 

 

5

mA

IGES

Gate to Emitter Leakage Current

VGE  = ±30V, VCE   = 0V

 

 

400

nA

VGE(th)

Gate Threshold Voltage

IC = 1mA, VCE  = VGE

4.5

 

5.7

V

 

VCE(sat)

 

Collector  to  Emitter  Saturation Voltage (Module Level)

 

IC = 600A, VGE  = 15V

TJ  = 25°C

 

3.00

3.20

 

V

TJ  = 125°C

 

3.60

 


YZPST-FZ600R17KE4 Package



Product Categories : Semiconductor Module Devices > IGBT Module

Home > Products > Semiconductor Module Devices > IGBT Module > 1700V 600A Single Switches 62mm single module
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