Mr. John chang
Model No.: YZPST-150B120F23
Brand: YZPST
Place Of Origin: China
VCES: 1200V
IC: 150A
ICRM: 300A
VGES: ±20V
Ptot: 968W
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 100000
Transportation: Ocean,Land
Supply Ability: 10000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Maximum junction temperature 175℃
Absolute Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25℃ | 1200 | V |
| Continuous Collector Current | IC | Tc=100℃ | 150 | A |
| Peak Collector Current | ICRM | tp=1ms | 300 | A |
| Gate-Emitter Voltage | VGES | Tvj=25℃ | ±20 | V |
| Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25℃ Tvjmax=175℃ | 968 | W |
IGBT Characteristics
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =4mA,Tvj=25℃ | 5.2 | 6 | 6.8 | V |
| VCE=1200V,VGE=0V, Tvj=25℃ | 1 | mA | ||||
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=125℃ | 5 | mA | ||
| Collector-Emitter | Ic=150A,VGE=15V, Tvj=25℃ | 1.8 | 2.1 | V | ||
| Saturation Voltage | VCE(sat) | Ic=150A,VGE=15V, Tvj=125℃ | 2 | V | ||
| Input Capacitance | Cies | 9.8 | nF | |||
| Output Capacitance | Coes | VCE=25V,VGE =0V, | 0.82 | nF | ||
| Reverse Transfer Capacitance | Cres | f=1MHz, Tvj=25℃ | 0.48 | nF | ||
| Internal Gate Resistance | Rgint | 2.5 | Ω | |||
| Turn-on Delay Time | td(on) | 185 | Ns | |||
| Rise Time | tr | IC =150 A | 55 | Ns | ||
| Turn-off Delay Ttime | td(off) | VCE = 600 V | 360 | Ns | ||
| Fall Time | tf | VGE = ±15V | 115 | Ns | ||
| Energy Dissipation During Turn-on Time | Eon | RG = 5.1Ω | 15.4 | mJ | ||
| Energy Dissipation During Turn-off Time | Eoff | Tvj=25℃ | 11.6 | mJ | ||
| Turn-on Delay Time | td(on) | 200 | Ns | |||
| Rise Time | tr | IC =150 A | 60 | Ns | ||
| Turn-off Delay Time | td(off) | VCE = 600 V | 420 | Ns | ||
| Fall Time | tf | VGE = ±15V | 120 | Ns | ||
| Energy Dissipation During Turn-on Time | Eon | RG =5.1Ω | 23.2 | mJ | ||
| Energy Dissipation During Turn-off Time | Eoff | Tvj=125℃ | 17 | mJ | ||
| Tp≤10us,VGE=15V, | ||||||
| SC Data | Isc | Tvj=150℃,Vcc=600V, | 500 | A | ||
| VCEM≤1200V | ||||||
Diode Characteristics
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Diode DC Forward Current | IF | Tc=100℃ | 150 | A | ||
| Diode Peak Forward Current | IFRM | 300 | A | |||
| IF=150A,Tvj=25℃ | 1.8 | 2.3 | V | |||
| Forward Voltage | VF | IF=150A,Tvj=125℃ | 1.85 | V | ||
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Recovered Charge | Qrr | 13.4 | uC | |||
| IF =150 A | ||||||
| Peak Reverse Recovery Current | Irr | VR=600V | 143 | A | ||
| Reverse Recovery Time | trr | -diF/dt =2200A/us | 160 | ns | ||
| Reverse Recovery Energy | Erec | Tvj=25℃ | 9.1 | mJ | ||
| Recovered Charge | Qrr | 26.1 | uC | |||
| IF =150 A | ||||||
| Peak Reverse Recovery Current | Irr | VR=600V | 178 | A | ||
| Reverse Recovery Time | trr | -diF/dt =2200A/us | 440 | ns | ||
| Reverse Recovery Energy | Erec | Tvj=125℃ | 15.4 | mJ | ||
Module CharacteristicsTC=25°C unless otherwise specified
| Parameter | Symbol | Conditions | Value | Unit | ||
| Min. | Typ. | Max. | ||||
| Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
| Maximum Junction Temperature | Tjmax | 150 | ℃ | |||
| Operating Junction Temperature | Tvjop | -40 | 125 | ℃ | ||
| Storage Temperature | Tstg | -40 | 125 | ℃ | ||
| per IGBT-inverter | 0.155 | K/W | ||||
| Junction-to Case | R θjc | per Diode-inverter | 0.292 | K/W | ||
| Case to Sink | R θcs | Conductive grease applied | 0.05 | K/W | ||
| Module ElectrodesTorque | Mt | Recommended(M5) | 2.5 | 5 | N·m | |
| Module-to-SinkTorque | Ms | Recommended(M6) | 3 | 5 | N·m | |
| Weight of Module | G | 150 | g | |||
Package Dimensions
Product Categories : Semiconductor Module Devices > IGBT Module
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