Mr. John chang
Model No.: YZPST-450B170E53
VCES: 1700V
IC: 450V
ICRM: 900A
VGES: ±20V
Ptot: 3260W
ICES: 1.0mA
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 10000
Transportation: Ocean,Air
Supply Ability: 10000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
IGBT Power Module YZPST-450B170E53
Applications
Inverter for motor drive
AC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)
Features
Low Vce(sat) with SPT+ IGBT technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low inductance module structure
Maximum junction temperature 175C
Absolute Maximum Ratings
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25C | 1700 | V |
| Continuous Collector Current | IC | Tc=100C | 450 | A |
| Peak Collector Current | ICRM | tp=1ms | 900 | A |
| Gate-Emitter Voltage | VGES | Tvj=25C | ±20 | V |
| Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25C Tvjmax=175C | 3260 | W |
IGBT Characteristics
Turn-on Delay Time td(on) IC =450 A VCE = 900 V VGE = ±15V RG = 3.3Ω Tvj=150C 515 ns Rise Time tr 200 ns Turn-off Delay Time td(off) 730 ns Fall Time tf 430 ns Energy Dissipation During Turn-on Time Eon 175 mJ Energy Dissipation During Turn-off Time Eoff 130 mJ SC Data Isc Tp≤10us,VGE=15V, Tvj=150C,Vcc=1000V, VCEM≤1700V 1450 A
Parameter Value Unit Symbol Conditions Min. Typ. Max. Gate-emitter Threshold Voltage VGE(th) VGE=VCE, IC =24mA,Tvj=25C 5.4 6.2 7.4 V Collector-Emitter Cut-off Current ICES VCE=1700V,VGE=0V, Tvj=25C 1 mA Ic=450A,VGE=15V, Tvj=25C 2.4 2.75 V Collector-Emitter VCE(sat) Ic=450A,VGE=15V, Tvj=125C 2.8 V Saturation Voltage Ic=450A,VGE=15V, Tvj=150C 2.9 V Gate Charge G 2.7 uC Input Capacitance Cies 30 nF Output Capacitance Coes VCE=25V,VGE =0V, 1.65 nF Reverse Transfer Capacitance Cres f=1MHz, Tvj=25C 1.08 nF Gate-Emitter leakage current IGES VCE=0 V, VGE=20 V, Tvj = 25C 400 nA Turn-on Delay Time td(on) 510 ns Rise Time tr IC =450 A 180 ns Turn-off Delay Time td(off) VCE = 900 V 620 ns Fall Time tf VGE = ±15V 185 ns Energy Dissipation During Turn-on Time Eon RG = 3.3Ω 126 mJ Energy Dissipation During Turn-off Time Eoff Tvj=25C 89 mJ Turn-on Delay Time td(on) 512 ns Rise Time tr IC =450 A 190 ns Turn-off Delay Time td(off) VCE = 900 V 712 ns Fall Time tf VGE = ±15V 350 ns Energy Dissipation During Turn-on Time Eon RG = 3.3Ω 162 mJ Energy Dissipation During Turn-off Time Eoff Tvj=125C 125 mJ
Diode Characteristics
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Diode DC Forward Current | IF | Tc=100C | 450 | A | ||
| Diode Peak Forward Current | IFRM | tp=1ms | 900 | A | ||
| IF=450A,Tvj=25C | 1.85 | V | ||||
| IF=450A,Tvj=125C | 1.92 | V | ||||
| Forward Voltage | VF | IF=450A,Tvj=150C | 1.9 | V | ||
| Recovered Charge | Qrr | IF =450 A | 110 | uC | ||
| VR=900V | ||||||
| Peak Reverse Recovery Current | Irr | -diF/dt =2500A/us | 348 | A | ||
| Reverse Recovery Energy | Erec | Tvj=25C | 64.2 | mJ | ||
| Recovered Charge | Qrr | IF =450 A | 160 | uC | ||
| VR=900V | ||||||
| Peak Reverse Recovery Current | Irr | -diF/dt =2500A/us | 394 | A | ||
| Reverse Recovery Energy | Erec | Tvj=125C | 94.4 | mJ | ||
| Recovered Charge | Qrr | IF =450 A | 176 | uC | ||
| VR=900V | ||||||
| Peak Reverse Recovery Current | Irr | -diF/dt =2500A/us | 410 | A | ||
| Reverse Recovery Energy | Erec | Tvj=150C | 103.2 | mJ | ||
Circuit Diagram
Product Categories : Semiconductor Module Devices > IGBT Module
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
