Mr. John chang
Model No.: YZPST-FF600R12ME4
Brand: YZPST
Place Of Origin: China
VCES: 1200V
IC: 600A
ICRM: 1200A
VGES: ±20V
Ptot: 3750W
Tvjop: -40--+150℃
Tstg: -40--+125℃
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000
Transportation: Ocean,Land,Express,Others
Place of Origin: china
Supply Ability: 100000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Low inductance module structure
Absolute Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25℃ | 1200 | V |
| Continuous Collector Current | IC | Tc=100℃ | 600 | A |
| Peak Collector Current | ICRM | ICRM=2IC | 1200 | A |
| Gate-Emitter Voltage | VGES | Tvj=25℃ | ±20 | V |
| Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25℃ Tvjmax=175℃ | 3750 | W |
IGBT Characteristics
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =3mA,Tvj=25℃ | 5 | 5.8 | 6.5 | V |
| VCE=1200V,VGE=0V, Tvj=25℃ | 1 | mA | ||||
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=125℃ | 5 | mA | ||
| Collector-Emitter | Ic=600A,VGE=15V, Tvj=25℃ | 1.7 | V | |||
| Saturation Voltage | VCE(sat) | Ic=600A,VGE=15V, Tvj=125℃ | 2 | V | ||
| Input Capacitance | Cies | 43.1 | nF | |||
| Output Capacitance | Coes | VCE=25V,VGE =0V, | 2.25 | nF | ||
| Reverse Transfer Capacitance | Cres | f=1MHz, Tvj=25℃ | 1.95 | nF | ||
| Internal Gate Resistance | Rgint | 1.25 | Ω | |||
| Turn-on Delay Time | td(on) | 250 | ns | |||
| Rise Time | tr | IC =600 A | 88 | ns | ||
| Turn-off Delay Time | td(off) | VCE = 600 V | 560 | ns | ||
| Fall Time | tf | VGE = ±15V | 131 | ns | ||
| Energy Dissipation During Turn-on Time | Eon | RG = 1.2Ω | 33.1 | mJ | ||
| Energy Dissipation During Turn-off Time | Eoff | Tvj=25℃ | 57.8 | mJ | ||
| Turn-on Delay Time | td(on) | 300 | ns | |||
| Rise Time | tr | IC =600 A | 102 | ns | ||
| Turn-off Delay Time | td(off) | VCE = 600 V | 650 | ns | ||
| Fall Time | tf | VGE = ±15V | 180 | ns | ||
| Energy Dissipation During Turn-on Time | Eon | RG = 1.2Ω | 50.2 | mJ | ||
| Energy Dissipation During Turn-off Time | Eoff | Tvj=125℃ | 87.8 | mJ | ||
| Tp≤10us,VGE=15V, | ||||||
| SC Data | Isc | Tvj=150℃,Vcc=600V, | 2400 | A | ||
| VCEM≤1200V | ||||||
Package Dimensions
Product Categories : Semiconductor Module Devices > IGBT Module
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