Mr. John chang
Model No.: YZPST-SK200GD066T
Brand: YZPST
Place Of Origin: China
VCES: 600V
IC: 174A
ICRM: 400A
VGES: ± 20V
T Psc: 6μs
IF: 99A
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 10000000
Transportation: Ocean,Land
Place of Origin: CHINA
Supply Ability: 10000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
| Characteristics Ts = 25 oC, unIess otherwise specified | |||||
| Symbol | |||||
| Conditions | |||||
| min. typ. max. | |||||
| Units | |||||
| IGBT | |||||
| VGE(th) | VGE = VCE, IC = 3,2 mA | 5 5,8 6,5 | V | ||
| ICES | VGE = 0 V, VCE = VCES Tj = 25 oC | 0,01 | mA | ||
| Tj = 125 oC | mA | ||||
| IGES | VCE = 0 V, VGE = 20 V Tj = 25 oC | 1200 | nA | ||
| Tj = 125 oC | nA | ||||
| VCE0 | Tj = 25 oC | 0,6 1 | V | ||
| Tj = 150 oC | 0,7 0,8 | V | |||
| rCE | VGE = 15 V Tj = 25oC | 2,75 4 | mΩ mΩ | ||
| Tj = 150oC | 4,25 5,5 | ||||
| VCE(sat) | ICnom = 200 A, VGE = 15 V Tj = 25oCchipIev. | 1,45 | 1,9 | V | |
| Tj = 150oCchipIev. | 1,7 | 2,15 | V | ||
| Cies | VCE = 25, VGE = 0 V f = 1 MHz | 12,2 | nF | ||
| C | 0,76 | nF | |||
| oes | 0,36 | nF | |||
| C | |||||
| res | |||||
| td(on) | RGon = 16 Ω | VCC = 300V | 144 | ns ns mJ ns ns mJ | |
| t r | di/dt = 1720 A/μs | IC= 200A | 128 | ||
| E | Tj = 150 oC | 13,9 | |||
| on | VGE= -7/+15 V | 1040 | |||
| 91 | |||||
| td(off) | RGoff = 16 Ω | 12 | |||
| tf | di/dt = 2575 A/μs | ||||
| E | |||||
| Rth(j-s) | per IGBT | 0,45 | K/W | ||
| Absolute Maximum Ratings Ts = 25 oC, unIess otherwise specified | ||||||
| Symbol | ||||||
| Conditions | ||||||
| Values | ||||||
| Units | ||||||
| IGBT | ||||||
| VCES | Tj = 25 oC | 600 | V | |||
| IC | Tj = 175 oC Ts = 25 oC | 174 | A | |||
| Ts = 70 oC | 131 | A | ||||
| ICRM | ICRM= 2 x ICnom | 400 | A | |||
| VGES | ± 20 | V | ||||
| t | VCC = 360 V; VGE ≤ 20 V; Tj = 125 oC | 6 | μs | |||
| psc | VCES < 600 V | |||||
| Inverse Diode | ||||||
| IF | Tj = 175 oC | T = 25 oC s | 99 | A | ||
| T = 70 oC s | 79 | A | ||||
| IFRM | IFRM= 2 x IFnom | 120 | A | |||
| Module | ||||||
| It(RMS) | A | |||||
| Tvj | -40 ... +175 | oC | ||||
| Tstg | -40 ... +125 | oC | ||||
| VisoI | AC, 1 min. | 2500 | V | |||
Product Categories : Semiconductor Module Devices > IGBT Module
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