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Home > Products > Semiconductor Module Devices > Diode Module > Ultrafast reverse recovery time 700V 200A FRED Module
  • Ultrafast reverse recovery time 700V 200A FRED Module
  • Ultrafast reverse recovery time 700V 200A FRED Module
  • Ultrafast reverse recovery time 700V 200A FRED Module
  • Ultrafast reverse recovery time 700V 200A FRED Module

Ultrafast reverse recovery time 700V 200A FRED Module

  • $10
    10-99
    Piece/Pieces
  • $7
    ≥100
    Piece/Pieces
Payment Type:
L/C,T/T,Paypal
Incoterm:
FOB,CFR,CIF
Min. Order:
10 Piece/Pieces
Transportation:
Ocean,Air
Port:
SHANGHAI
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  • Product Description
Overview
Product Attributes

Model No.YZPST-MMF200N070DK

BrandYZPST

Manufacturing TechnologyIntegrated Circuits Device

MaterialCompound Semiconductor

TypeN-type Semiconductor

PackageDIP(Dual In-line Package)

Batch Number2010+

IF(AV)M300A

IFRMS425A

IFSM1500A

TJ-55 ~ + 150℃

Tstg-55 ~ + 150℃

IRRM3mA

VFM1.70V

TRR90ns

Supply Ability & Additional Information

Productivity10000

TransportationOcean,Air

Place of OriginCHINA

Supply Ability10000

CertificateISO9001-2008,ROHS

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

700V 200A  FRED  Module

YZPST-MMF200N070DK

Ultrafast reverse recovery time 700V 200A FRED Module

PRODUCT FEATURES

Ultrafast Reverse Recovery Time

Soft Reverse Recovery Characteristics

Low Reverse Recovery Loss

Low Forward Voltage

High  Surge  Current Capability

Low Leakage Current

APPLICATIONS

Inversion Welder

Uninterruptible Power Supply

Plating Power Supply

Ultrasonic Cleaner and Welder

Converter & Chopper

PFC

ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)

Symbol

Parameter/Test Conditions

Values

Unit

VR

Maximum D.C. Reverse Voltage

 

700

 

V

VRRM

Maximum Repetitive Reverse Voltage

 

IF(AV)

 

Average Forward Current

TC=90, Per Diode

100

 

 

 

A

TC=90, Per Moudle

200

IF(RMS)

RMS Forward Current

TC=90°C, Per Diode

141

 

IFSM

Non Repetitive Surge Forward

Current

TJ=45,t=10ms,Sine,peak value

1200

T =45,t=8.3ms,Sine,peak value

1320

 

I2t

 

For Fusing

TJ=45,t=10ms,Sine,peak value

7200

 

A2S

TJ=45,t=8.3ms,Sine,peak value

7230

PD

Power Dissipation

370

W

TJ

Junction Temperature

-40 to +150

TSTG

Storage Temperature Range

-40 to +125

Visol

Isolation Breakdown Voltage

AC, 50Hz(R.M.S), t=1minute

3000

V

Torque

Module to Sink

RecommendedM5

2.54

Nm

Torque

Module Electrodes

RecommendedM5

2.54

Nm

RthJC

Junction to Case Thermal Resistance(Per Diode )

0.34

 /W

Weight

 

100

g

YZPST-MMF200N070DK-outline


Product Categories : Semiconductor Module Devices > Diode Module

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