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Home > Products > Semiconductor Module Devices > Diode Module > High surge capability 150A silicon super fast recovery diode module
  • High surge capability 150A silicon super fast recovery diode module
  • High surge capability 150A silicon super fast recovery diode module
  • High surge capability 150A silicon super fast recovery diode module
  • High surge capability 150A silicon super fast recovery diode module
  • High surge capability 150A silicon super fast recovery diode module

High surge capability 150A silicon super fast recovery diode module

  • $8.2
    100-999
    Piece/Pieces
  • $6.2
    ≥1000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-ESB150NH40SN

BrandYZPST

Place Of OriginChina

IF(AV)M150A

IFSM2100A

I2t1830kA2S

Tj-40 ~ + 175℃

Tstg-40 ~ + 150℃

IRRM1mA

VFM1.4V

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity100000000

TransportationOcean,Land,Others

Place of OriginCHINA

Supply Ability100000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
Picture Example:

Silicon Super Fast Recovery Diode Module 

TYPE:YZPST-ESB150NH40SN

Features

· High Surge Capability

· Types from 50 V to 600 V  VRRM 

· Not ESD Sensitive

YZPST-ESB150NH40SN

Symbol

Condition

Ratings

Unit

IF(AV)M

TC=100°C; 180° sine

150

A

IFRMS

maximum value for continuous operation

 

A

IFSM

Tj=25°C; t = 8.3 ms (50 Hz); sine

2100

A

I2t

Tj=25°C; t = 8.3 ms (50 Hz); sine

1830

kA2S

Viso

A.C.1minute/1second

-

V

Tj

 

-40  ~  + 175

°C

Tstg

 

-40  ~  + 150

°C

M

mounting torque; ±15%

4

Nm

terminal torque; ±15%

3

Nm

W

approx.

95

g

IRRM

AtVRRMSingle phasehalf waveTj=100°C

1

mA

VFM

On-State Current 150ATj=25°C

1.40

V

VF0

Tj=150°C

-

V

rF

Tj=150°C

-

trr

Tj=25°C; IF = 150A; -diF/dt =300A/μs; VR = 200V;

120

ns

Qrr

Tj=150°C; IF = 50A; -diF/dt = 100A/μs; VR = 100V

-

us

IRM

-

A

Rth(j-c)

Per Module

0.12

°C/W

Rth(c-h)

Per Module

-

°C/W

Outline Drawing

Outline Jpg

Product Categories : Semiconductor Module Devices > Diode Module

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