Mr. John chang
Model No.: YZPST-MCD215-20I01
Brand: YZPST
Place Of Origin: China
VDRM/VRRM: 2000V
VRSM: 2100V
IT(AV): 215A
ITRMS: 340A
(di/dt)cr: 100A/us
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000
Transportation: Ocean,Land
Supply Ability: 100000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Thyristor/Diode Modules YZPST-MCD215-20I01
Features
· Industrial standard package
· Electrically insulated base plate
· Heat transfer through aluminium oxide ceramic
insulated metal base plate
· Chip soldered on direct copper bonded AL2O3
ceramic
· Thyristor chip with center gate
| VDRM/VRRM | Tj=25°C | 2000 | V |
| VRSM | Tj=25°C | 2100 | V |
Maximum Ratings
Symbol Condition Ratings Unit IT(AV) sin. 180; Tc =85°C, 215 A ITRMS sin. 180; Tc =125°C, 340 A ITSM Tvj =45°C; 10 ms 8000 A Tvj =125°C; 10 ms 6800 A I2t Tvj =45°C; 8,3…10 ms 320 kA2S (di/dt)cr non-repetitive 100 A/us Viso A.C. 1s / 1min. 3600/3000 V Tj -40 ~ + 125 °C Tstg -40 ~ + 125 °C W About 150 g
Electrical Characteristics
| Symbol | Condition | Ratings | Unit |
| IDRM /IRRM | AtVDRM, Tj=125°C | 15 | mA |
| VT | On-State Current 200A, Tj=25°C | 1.20 | V |
| VT(TO) | Tj=125°C | 0.80 | V |
| tgd | Tj=25°C | 2 | us |
| tq | Tj=100°C | 200 | us |
| IGT/VGT | Tj=25°C | 150 / 2.0 | mA/V |
| VGD | Tj=125°C | 0.25 | V |
| (dv/dt)cr | Tj=125°C | 1000 | V/us |
| IH | Tj=25°C, max. | 150 | mA |
| IL | Tj=25°C, max. | 200 | mA |
| Rth(j-c) | Per Module | 0.13 | K/W |
Product Categories : Semiconductor Module Devices > Diode Module
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