Mr. John chang
Model No.: YZPST-SKM195GB066D
Brand: YZPST
Place Of Origin: China
VCES: 650V
IC: 200A
ICRM: 400A
VGES: ±20V
Ptot: 695W
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 10000
Transportation: Ocean,Land
Supply Ability: 10000
Port: SHANGHAI
Payment Type: L/C,Paypal
Incoterm: FOB,CFR,CIF
IGBT Power Module Type:YZPST-SKM195GB066D
Applications
Inverter for motor drive
AC and DC servo drive amplifier
UPS (Uninterruptible Power Supplies)
Soft switching welding machine
Features
Low Vce(sat) with Trench Field-stop technology
Vce(sat) with positive temperature coefficient
Including fast & soft recovery anti-parallel FWD
High short circuit capability(10us)
Low inductance module structure
Maximum junction temperature 175℃
Absolute Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25℃ | 650 | V |
| Continuous Collector Current | IC | Tc=100℃ | 200 | A |
| Peak Collector Current | ICRM | tp=1ms | 400 | A |
| Gate-Emitter Voltage | VGES | Tvj=25℃ | ±20 | V |
| Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25℃ Tvjmax=175℃ | 695 | W |
IGBT Characteristics
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =3.2mA,Tvj=25℃ | 5.1 | 5.8 | 6.3 | V |
| VCE=650V,VGE=0V, Tvj=25℃ | 1 | mA | ||||
| Collector-Emitter Cut-off Current | ICES | VCE=650V,VGE=0V, Tvj=125℃ | 5 | mA | ||
| Collector-Emitter | Ic=200A,VGE=15V, Tvj=25℃ | 1.45 | 1.95 | V | ||
| Saturation Voltage | VCE(sat) | Ic=200A,VGE=15V, Tvj=125℃ | 1.65 | V | ||
| Input Capacitance | Cies | VCE=25V,VGE =0V, | 12.3 | nF | ||
| Reverse Transfer Capacitance | Cres | f=1MHz, Tvj=25℃ | 0.37 | nF | ||
| Internal Gate Resistance | Rgint | 1 | Ω | |||
| Turn-on Delay Time | td(on) | 48 | Ns | |||
| Rise Time | tr | IC =200 A | 48 | Ns | ||
| Turn-off Delay Ttime | td(off) | VCE =300 V | 348 | Ns | ||
| Fall Time | tf | VGE = ±15V | 58 | Ns | ||
| Energy Dissipation During Turn-on Time | Eon | RG = 3.6Ω | 2.32 | mJ | ||
| Energy Dissipation During Turn-off Time | Eoff | Tvj=25℃ | 5.85 | mJ | ||
| Turn-on Delay Time | td(on) | 48 | Ns | |||
| Rise Time | tr | IC =200 A | 48 | Ns | ||
| Turn-off Delay Time | td(off) | VCE = 300V | 364 | Ns | ||
| Fall Time | tf | VGE = ±15V | 102 | Ns | ||
| Energy Dissipation During Turn-on Time | Eon | RG =3.6Ω | 3.08 | mJ | ||
| Energy Dissipation During Turn-off Time | Eoff | Tvj=125℃ | 7.92 | mJ | ||
| SC Data | Isc | Tp≤10us,VGE=15V,Tvj=150℃ , Vcc=300V,VCEM≤650V | 1000 | A | ||
Diode Characteristics
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Diode DC Forward Current | IF | Tc=100℃ | 200 | A | ||
| Diode Peak Forward Current | IFRM | 400 | A | |||
| IF=200A,Tvj=25℃ | 1.55 | 1.95 | V | |||
| Forward Voltage | VF | IF=200A,Tvj=125℃ | 1.5 | V | ||
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Recovered Charge | Qrr | 8.05 | uC | |||
| IF =200 A | ||||||
| VR=300V | ||||||
| Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 148 | A | ||
| Reverse Recovery Energy | Erec | Tvj=25℃ | 1.94 | mJ | ||
| Recovered Charge | Qrr | 16.9 | uC | |||
| IF =200 A | ||||||
| VR=300V | ||||||
| Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 186 | A | ||
| Reverse Recovery Energy | Erec | Tvj=125℃ | 3.75 | mJ | ||
Module CharacteristicsTC=25°C unless otherwise specified
| Parameter | Symbol | Conditions | Value | Unit | ||
| Min. | Typ. | Max. | ||||
| Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
| Maximum Junction Temperature | Tjmax | 150 | ℃ | |||
| Operating Junction Temperature | Tvj op | -40 | 125 | ℃ | ||
| Storage Temperature | Tstg | -40 | 125 | ℃ | ||
| per IGBT-inverter | 0.19 | K/W | ||||
| Junction-to Case | R θjc | per Diode-inverter | 0.31 | K/W | ||
| Case to Sink | R θcs | Conductive grease applied | 0.085 | K/W | ||
| Module ElectrodesTorque | Mt | Recommended(M5) | 2.5 | 5 | N · m | |
| Module-to-SinkTorque | Ms | Recommended(M6) | 3 | 5 | N · m | |
| Weight of Module | G | 150 | g | |||
Package Dimensions
Product Categories : Semiconductor Module Devices > IGBT Module
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
