Mr. John chang
Model No.: YZPST-600B120E53
Brand: YZPST
VCES: 1200V
ICR: 1200A
VGES: ±20V
Ptot: 3750W
IC: 600A
Productivity: 10000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
YZPST-600B120E53
IGBT Power Module
ApplicationsAbsolute Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25℃ | 1200 | V |
| Continuous Collector Current | IC | Tc=100℃ | 600 | A |
| Peak Collector Current | ICRM | ICRM=2IC | 1200 | A |
| Gate-Emitter Voltage | VGES | Tvj=25℃ | ±20 | V |
| Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25℃ Tvjmax=175℃ | 3750 | W |
IGBT Characteristics
|
Parameter |
Symbol |
Conditions |
Value |
Unit | ||
| Min. | Typ. | Max. |
| |||
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =3mA,Tvj=25℃ | 5.0 | 5.8 | 6.5 | V |
|
Collector-Emitter Cut-off Current |
ICES | VCE=1200V,VGE=0V, Tvj=25℃ |
|
| 1.0 | mA |
| VCE=1200V,VGE=0V, Tvj=125℃ |
|
| 5.0 | mA | ||
| Collector-Emitter Saturation Voltage |
VCE(sat) | Ic=600A,VGE=15V, Tvj=25℃ |
| 1.70 |
| V |
| Ic=600A,VGE=15V, Tvj=125℃ |
| 2.00 |
| V | ||
| Input Capacitance | Cies |
VCE=25V,VGE =0V, f=1MHz, Tvj=25℃ |
| 43.1 |
| nF |
| Output Capacitance | Coes |
| 2.25 |
| nF | |
| Reverse Transfer Capacitance | Cres |
| 1.95 |
| nF | |
| Internal Gate Resistance | Rgint |
|
| 1.25 |
| Ω |
| Turn-on Delay Time | td(on) |
IC =600 A VCE = 600 V VGE = ±15V RG = 1.2Ω Tvj=25℃ |
| 250 |
| ns |
| Rise Time | tr |
| 88 |
| ns | |
| Turn-off Delay Time | td(off) |
| 560 |
| ns | |
| Fall Time | tf |
| 131 |
| ns | |
| Energy Dissipation During Turn-on Time | Eon |
| 33.1 |
| mJ | |
| Energy Dissipation During Turn-off Time | Eoff |
| 57.8 |
| mJ | |
| Turn-on Delay Time | td(on) |
IC =600 A VCE = 600 V VGE = ±15V RG = 1.2Ω Tvj=125℃ |
| 300 |
| ns |
| Rise Time | tr |
| 102 |
| ns | |
| Turn-off Delay Time | td(off) |
| 650 |
| ns | |
| Fall Time | tf |
| 180 |
| ns | |
| Energy Dissipation During Turn-on Time | Eon |
| 50.2 |
| mJ | |
| Energy Dissipation During Turn-off Time | Eoff |
| 87.8 |
| mJ | |
|
SC Data |
Isc | Tp≤10us,VGE=15V, Tvj=150℃,Vcc=600V, VCEM≤1200V |
|
2400 |
|
A |
|
Parameter |
Symbol |
Conditions |
Value |
Unit | ||
| Min. | Typ. | Max. |
| |||
| Diode DC Forward Current | IF | Tc=100℃ |
| 600 |
| A |
| Diode Peak Forward Current | IFRM | IFRM=2IF |
| 1200 |
| A |
|
Forward Voltage |
VF | IF=600A,Tvj=25℃ |
| 1.65 |
| V |
| IF=600A,Tvj=125℃ |
| 1.75 |
| V | ||
| Recovered Charge | Qrr |
IF =600 A VR=600V -diF/dt =6000A/us Tvj=25℃ |
| 60.3 |
| uC |
| Peak Reverse Recovery Current | Irr |
| 415 |
| A | |
| Reverse Recovery Time | trr |
| 260 |
| ns | |
| Reverse Recovery Energy | Erec |
| 28.1 |
| mJ | |
| Recovered Charge | Qrr |
IF =600 A VR=600V -diF/dt =6000A/us Tvj=125℃ |
| 114 |
| uC |
| Peak Reverse Recovery Current | Irr |
| 543 |
| A | |
| Reverse Recovery Time | trr |
| 380 |
| ns | |
| Reverse Recovery Energy | Erec |
| 51.8 |
| mJ | |
Package Dimensions
Product Categories : Semiconductor Module Devices > IGBT Module
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