Mr. John chang
Model No.: YZPST-FF600R17ME4 (600B170E53)
Brand: YZPST
Place Of Origin: China
VCES: 1700V
IC: 600A
ICRM: 1200A
VGES: ±20V
Ptot: 4286W
ICES: 1.0mA
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000
Transportation: Ocean,Land,Air,Express
Place of Origin: CHINA
Supply Ability: 1000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Absolute Maximum Ratings
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25℃ | 1700 | V |
| Continuous Collector Current | IC | Tc=100℃ | 600 | A |
| Peak Collector Current | ICRM | ICRM =2IC | 1200 | A |
| Gate-Emitter Voltage | VGES | Tvj=25℃ | ±20 | V |
| Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25℃ Tvjmax=175℃ | 4286 | W |
IGBT Characteristics
| Parameter | Value | Unit | ||||
| Symbol | Conditions | Min. | Typ. | Max. | ||
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =24mA,Tvj=25℃ | 5.4 | 6.2 | 7.4 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1700V,VGE=0V, Tvj=25℃ | 1 | mA | ||
| Ic=600A,VGE=15V, Tvj=25℃ | 2.4 | 2.75 | V | |||
| Ic=600A,VGE=15V, Tvj=125℃ | 2.8 | V | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | Ic=600A,VGE=15V, Tvj=150℃ | 2.9 | V | ||
| Input Capacitance | Cies | 40 | nF | |||
| Output Capacitance | Coes | 2.09 | nF | |||
| Reverse Transfer Capacitance | Cres | VCE=25V,VGE =0V, f=1MHz, Tvj=25℃ | 1.44 | nF | ||
| Turn-on Delay Time | td(on) | 180 | ns | |||
| Rise Time | tr | 100 | ns | |||
| Turn-off Delay Time | td(off) | 300 | ns | |||
| Fall Time | tf | IC =600 A | 100 | ns | ||
| Energy Dissipation During Turn-on Time | Eon | VCE = 900 V VGE = ±15V RG = 1.0Ω Tvj=25℃ | 150 | mJ | ||
| Energy Dissipation During Turn-off Time | Eoff | 100 | mJ | |||
| Turn-on Delay Time | td(on) | 190 | ns | |||
| Rise Time | tr | 110 | ns | |||
| Turn-off Delay Time | td(off) | 350 | ns | |||
| Fall Time | tf | IC =600 A | 150 | ns | ||
| Energy Dissipation During Turn-on Time | Eon | VCE = 900 V VGE = ±15V RG = 1.0Ω Tvj=125℃ | 225 | mJ | ||
| Energy Dissipation During Turn-off Time | Eoff | 160 | mJ | |||
Package Dimensions
Product Categories : Semiconductor Module Devices > IGBT Module
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