Mr. John chang
Model No.: YZPST-R3708FC45V
Brand: YZPST
VRRM: 4500V
VDRM: 4500V
VRSM: 4600V
IRRM / IDRM: 200mA
DV/dt: 200 V/μsec
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9000
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
YZPST-R3708FC45V
Features:
. All Diffused Structure
. Linear Amplifying Gate Configuration
. Blocking capabilty up to 4500 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
|
VDRM
= Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM | 200 mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 200 V/μsec |
Conducting - on state
waveshape to 80% rated VDRM. Gate open. Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi- tion to that obtained from a snubber circuit, comprising a 0.2 μF capacitor and 20 ohms resistance in parallel with the thristor under test.
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV) |
| 3708 |
| A | Sinewave,180o conduction,TS=55oC |
| RMS value of on-state current | ITRMS |
| 7364 |
| A | TS=25oC |
| Peak one cpstcle surge (non repetitive) current |
ITSM |
| 50000 |
| A | 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 12.5x106 |
| A2s | 10.0 msec |
| Latching current | IL |
|
1000 |
| mA | VD = 12 V; RL= 12 ohms |
| Holding current | IH |
|
450 |
| mA | VD = 12 V; I = 2.5 A |
| Peak on-state voltage | VTM |
|
2.1 |
| V | ITM = 4000 A; Duty cpstcle ≤ 0.01% Tj = 125 oC |
| Critical rate of rise of on-state current (5, 6) | di/dt |
|
250 |
| A/μs | Switching from VDRM ≤ 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt |
|
100 |
| A/μs | Switching from VDRM ≤ 1000 V |
ELECTRICAL CHARACTERISTICS AND RATINGS R3708FC45 - Power Thyristor
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 200 |
| W | tp = 40 us |
| Average gate power dissipation | PG(AV) |
| 5 |
| W |
|
| Peak gate current | IGM |
| 15 |
| A |
|
| Gate current required to trigger all units | IGT |
30 | 300 200 125 |
| mA mA mA | VD = 12V;RL = 6 ohms;Tj = -40 oC VD = 12V;RL = 6 ohms;Tj = +25 oC VD = 12V;RL = 6 ohms;Tj = +125oC |
| Gate voltage required to trigger all units | VGT |
0.30 | 5 3 |
| V V V | VD = 12 V;RL = 6 ohms;Tj = -40 oC VD = 12V;RL = 6 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
| Peak negative voltage | VGRM |
| 15 |
| V |
|
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | td |
|
| 2.5 | μs | ITM = 50 A; VD = 1500 V Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 μs; tp = 20 μs |
| Turn-off time (with VR = -50 V) | tq |
|
| 250 | μs | ITM =4000 A; di/dt = 60 A/μs; VR =100 V; Re-applied dV/dt = 20 V/μs linear to 67% VDRM; VG = 0; Tj = 125 oC; Tp=2000us |
| Reverse recovery current | Irr |
|
|
| A | ITM =4000 A; di/dt = 60 A/μs; VR =100 V |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
| Storage temperature | Tstg | -40 | +140 |
| oC |
|
| Thermal resistance - junction to sink | RΘ (j-s) |
| 0.0075 0.0150 |
| o C/W | Double sided cooled Single sided cooled |
| Mounting force | P | 98 | 113 |
| kN |
|
| Weight | W |
|
| 2.7 | Kg. |
|
* Mounting surfaces smooth, flat and greased
| Sym | A | B | C | E |
| Inches | 3.9 3 | 5.90 | 5.15 | 1.37 |
| mm | 100 | 150 | 131 | 35±1.0 |
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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