Mr. John chang
Model No.: YZPST-KP4350A1600V
Brand: YZPST
VRRM: 1600V
VDRM: 1600V
I RRM /I DRM: 450A
I T(AV): 4350A
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9000
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
High power thyristor for phase control applications
YZPST-KP4350A1600V
Features:
. All Diffused Structure
. Linear Amplifying Gate Configuration
. Blocking capabilty up to 1600 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
| Device Type | VRRM (1) | VDRM (1) | VRSM (1) |
| KP4350A | 1600 | 1600 | 1700 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM
| 450 mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 300 V/msec |
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV) |
| 4350 |
| A | Sinewave,180o conduction,TS=70oC |
| Peak one cpstcle surge (non repetitive) current |
ITSM |
| 48900
|
| A
| 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 11.9x106 |
| A2s | 10.0 msec |
| Latching current | IL |
| 1000 |
| mA | VD = 12 V; RL= 12 ohms |
| Holding current | IH |
| 450 |
| mA | VD = 12 V; I = 2.5 A |
| Peak on-state voltage | VTM |
| 1.5 |
| V | ITM = 6000 A; Duty cpstcle £ 0.01% Tj = 25 oC |
| Critical rate of rise of on-state current (5) | di/dt |
| 200 |
| A/ms | Switching from VDRM £ 1000 V, non-repetitive |
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 200 |
| W | tp = 40 us |
| Average gate power dissipation | PG(AV) |
| 5 |
| W |
|
| Peak gate current | IGM |
| 15 |
| A |
|
| Gate current required to trigger all units | IGT |
30 | 300 200 125 |
| mA mA mA | VD = 12 V;RL = 6 ohms;Tj = -40 oC VD = 12 V;RL = 6 ohms;Tj = +25 oC VD = 12 V;RL = 6 ohms;Tj = +125oC |
| Gate voltage required to trigger all units
| VGT |
0.30 | 5 3
|
| V V V | VD = 12 V;RL = 6 ohms;Tj = -40 oC VD = 12 V;RL = 6 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
| Peak negative voltage | VGRM |
| 15 |
| V |
|
CASE OUTLINE AND DIMENSIONS.
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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