4000A 2500V KK4000 Thyristors Phase Control

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Product Description

Product Attributes
Supply Ability & Additional Information

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Overview

Product Attributes

Model No.: YZPST-KK4000A2500V

Brand: YZPST

Supply Ability & Additional Information

Productivity: 100

Transportation: Ocean,Air

Place of Origin: China

Supply Ability: 500

Certificate: ISO9001-2008

HS Code: 85413000

Port: Shanghai

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Phase control of High Power Thyristor

YZPST-KK4000A2500V

Phase Control Thyristor

At the specified ambient temperature, a certain voltage is added between the anode and cathode to enable the minimum control current and voltage required for the thyristor to switch from off state to conduction state.

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		4000		A	Sinewave,180^o conduction,T_c=70^oC
RMS value of on-state current	I_TRMS		4900		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		55000 52000		A A	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		5.5x10⁶		A²s	8.3 msec

Latching current	I_L	1000	mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H	500	mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM	2.30	V	I_TM = 3000 A;
Critical rate of rise of on-state current (5, 6)	di/dt	800	A/ms	Switching from V_DRM£ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt	300	A/ms	Switching from V_DRM£ 1000 V

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		200		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		5		W
Peak gate current	I_GM		20		A
Gate current required to trigger all units	I_GT		300 200 125		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT	0.30	5 4		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		20		V

Dynamic

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Delay time	t_d		2.0		ms	I_TM = 50 A; V_D = 67% V_DRM Gate pulse: V_G = 30 V; R_G = 10 ohms; t_r = 0.1 ms; t_p = 20 ms
Turn-off time (with V_R = -5 V)	t_q		80		ms	I_TM > 2000 A; di/dt = 25 A/ms; V_R³ -5 V; Re-applied dV/dt = 400 V/ms linear to 67% V_DRM ; T_j = 125 ^oC; Duty cPSTCle ³ 0.01%
Reverse recovery current	I_rr		200		A	I_TM > 2000 A; di/dt = 25 A/ms; V_R³ -50 V; T_j = 125 ^oC

THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Operating temperature	T_j	-40	+125		^oC
Storage temperature	T_stg	-40	+150		^oC
Thermal resistance - junction to case	R_{Q (j-c)}		0.012		^oC/W	Double sided cooled Single sided cooled
Thermal resistamce - case to sink	R_{Q (c-s)}		0.002		^oC/W	Double sided cooled * Single sided cooled *
Mounting force	P	10000	12000		lb. kN
Weight	W			3.5 1.60	Lb. Kg.