Mr. John chang
Model No.: YZPST-T171-320-10
Brand: YZPST
Supply Type: Original Manufacturer
Reference Materials: Photo, Other
Configuration: Array
Current-breakdown: Not Applicable
Operating Temperature: -40°c ~ 125°c
SCR Type: Sensitive Gate
Structure: Single
Voltage-on: Not Applicable
Voltage-gate Trigger (Vgt) (maximum): Not Applicable
Current-output (maximum): Not Applicable
ITRMS: 502A
ITSM: 7kA
IH: 300mA
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Phase Control Thyristors
YZPST-T171-320-10
Features
Center amplifying gate configuration
Compression bonded encapsulation
High dV/dt Capability
Stud type, thread inch or metric
Typical Applications
Medium power switching
DC power supplies
Maximum Ratings And Characteristics
| Symbol | Parameter | Values | Units | Test Conditions | |
| ON-STATE |
|
|
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| ITAV | Mean on-state current | 320 | A | Sinewave,180° conduction,Tc=84oC | |
| ITRMS | RMS value of on-state current | 502 | A | Nominal value | |
| ITSM | Peak one cycle surge (non repetitive) current | 7 | kA | 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC | |
| I2t | I square t | 240 | KA2s | 8.3 msec and 10.0 msec | |
| IL | Latching current | 700 | mA | VD = 24 V; RL= 12 ohms | |
| IH | Holding current | 300 | mA | VD = 24 V; I = 2.5 A | |
| VTM | Peak on-state voltage | 1.6 | V | ITM = 1005 A | |
| di/dt | Critical rate of rise of on-state current | non-repetitive | 1000 | A/ms | Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM |
| repetitive | - | ||||
| BLOCKING |
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| VDRM VRRM | Repetitive peak off state voltage Repetitive peak reverse voltage | 1000 | V |
| |
| VDSM VRSM | Non repetitive peak off state voltage Non repetitive peak reverse voltage | 1100 | V |
| |
| IDRM IRRM | Repetitive peak off state current Repetitive peak reverse current | 70 | mA | Tj = 100 oC ,VRRM VDRM applied | |
| dV/dt | Critical rate of voltage rise | 500 | V/ms | TJ=TJmax, linear to 80% rated VDRM | |
| TRIGGEING |
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| PG(AV) | Average gate power dissipation | 3 | W |
| |
| PGM | Peak gate power dissipation | - | W |
| |
| IGM | Peak gate current | 6 | A |
| |
| IGT | Gate trigger current | 250 | mA | TC = 25 oC | |
| VGT | Gate trigger voltage | 2.5 | V | TC = 25 oC | |
| VGD | Gate non-trigger voltage | 0.6 | V | Tj = 125 oC | |
| VT0 |
| 1.006 | V | Tj = 125 oC | |
| rT |
| 0612 | mΩ |
| |
| SWITCHING |
|
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| tq | Turn-off time | 125 | ms | ITM=320A, TJ=TJmax, di/dt=10A/μs, VR=100V,dv/dt=50V/μs, Gate 0V 100Ω, tp=500μs | |
| td | Delay time | - | Gate current A, di/dt=40A/μs, Vd=0.67%VDRM, TJ=25 oC | ||
Thermal And Mechanical
| Symbol | Parameter | Values | Units | Test Conditions |
| Tj | Operating temperature | -40~125 | oC |
|
| Tstg | Storage temperature | -40~125 | oC |
|
| R th (j-c) | Thermal resistance - junction to case | 0.085 | oC/W | DC operation ，Single sided cooled |
| R th (c-s) | Thermal resistance - case to sink | - | oC/W | Single sided cooled |
| P | Mounting force | - | Nm | ± 10 % |
| W | Weight | 440 | g | about |
OUTLINE
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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