Mr. John chang
Model No.: YZPST-DCR1020SF60
Brand: YZPST
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Power Control Thyristors
YZPST-DCR1020SF60
Features:
. All Diffused Structure
. Center Amplifying Gate Configuration
. Blocking capabilty up to 4200 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
| VRRM (1) | VDRM (1) | VRSM (1) |
| 6000~6500 | 6000~6500 | 6100~6600 |
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM
| 25 mA 150 mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 1000 V/msec |
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 F capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Conducting - on state
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV) |
| 640 |
| A | Sinewave,180o conduction,Tc=60oC |
| RMS value of on-state current | ITRMS |
| 1005 |
| A | Nominal value |
| Peak one cPSTCle surge (non repetitive) current |
ITSM |
| -
8.5 |
| KA
KA | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 0.36x106 |
| A2s | 8.3 msec and 10.0 msec |
| Latching current | IL |
| 600 |
| mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
| 200 |
| mA | VD = 24 V; I =2.5 A |
| Peak on-state voltage | VTM |
| 3.6 |
| V | ITM = 1800 A; Duty cPSTCle £ 0.01%; Tj = 25 oC |
| Critical rate of rise of on-state current (5, 6) | di/dt |
| - |
| A/ms | Switching from VDRM £ 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt |
| 100 |
| A/ms | Switching from VDRM £ 1000 V |
ELECTRICAL CHARACTERISTICS AND RATINGS
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 150 |
| W | tp = 40 us |
| Average gate power dissipation | PG(AV) |
| 5 |
| W |
|
| Peak gate current | IGM |
| - |
| A |
|
| Gate current required to trigger all units | IGT |
| - 300 - |
| mA mA mA | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
| Gate voltage required to trigger all units
| VGT |
| - 3.0 -
|
| V V V | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
| Peak negative voltage | VGRM |
| 5 |
| V |
|
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | td |
| - | 0.5 | ms | ITM =50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
| Turn-off time (with VR = -50 V) | tq |
| - | 600 | ms | ITM =1000 A; di/dt =25 A/ms; VR ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
| Reverse recovery charge | Qrr |
| * |
| mC | ITM =1000 A; di/dt =25 A/ms; VR ³ -50 V |
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Operating temperature | Tj | -40 | +125 |
| oC |
|
| Storage temperature | Tstg | -40 | +125 |
| oC |
|
| Thermal resistance - junction to case | RQ (j-c) |
| 0.022 0.052 |
| oC/W | Double sided cooled Single sided cooled |
| Thermal resistamce - case to sink | RQ (c-s) |
| 0.004 0.008 |
| oC/W | Double sided cooled * Single sided cooled * |
| Thermal resistamce - junction to sink | RQ (j-s) |
| - - |
| oC/W | Double sided cooled * Single sided cooled * |
| Mounting force | P | 18 | 22 |
| kN |
|
| Weight | W |
|
| - | g |
|
* Mounting surfaces smooth, flat and greased
Conducting - on state
| Sym | A | B | C | D | H |
| mm | 75 | 47 | 66 | 3.5×3 | 26±1 |
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
