Mr. John chang
Model No.: YZPST-ST330S16
Brand: YZPST
Type: Intrinsic Semiconductor
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Phase Control Thyristors
YZPST-ST330S16
Features
● Center amplifying gate configuration
● Compression bonded encapsulation
● High dV/dt Capability
● Stud type, thread inch or metric
Typical Applications
● Medium power switching
● DC power supplies
Maximum Ratings And Characteristics
| Symbol | Parameter | Values | Units | Test Conditions | |
| ON-STATE |
|
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| ITAV | Mean on-state current | 330 | A | Sinewave,180° conduction,Tc=75℃ | |
| ITRMS | RMS value of on-state current | 520 | A | Nominal value | |
| ITSM | Peak one cycle surge (non repetitive) current | 9000 | A
| 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC | |
| I2t | I square t | 405 | KA2s | 8.3 msec and 10.0 msec | |
| IL | Latching current | 1000 | mA | VD = 24 V; RL= 12 ohms | |
| IH | Holding current | 600 | mA | VD = 24 V; I = 2.5 A | |
| VTM | Peak on-state voltage | 1.51 | V | ITM = 1040 A; Duty cycle £ 0.01%
| |
| di/dt | Critical rate of rise of on-state current | non-repetitive | 1000 | A/ms | Tj =100 oC V D= 1/2VDRM, ITM=(2x ITAV) A Gate pulse:tw≥20μs, tr≤0.5μs fG=50Hz IGM≥5 IGT |
| repetitive | - | ||||
| BLOCKING |
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| VDRM VRRM | Repetitive peak off state voltage Repetitive peak reverse voltage | 1600 | V |
| |
| VDSM VRSM | Non repetitive peak off state voltage Non repetitive peak reverse voltage | 1700 | V |
| |
| IDRM IRRM | Repetitive peak off state current Repetitive peak reverse current | 50 | mA | Tj = 100 oC ,VRRM VDRM applied | |
| dV/dt | Critical rate of voltage rise | 500 | V/ms | Tj = 100 oC VD =0.67 VDRM Gate open | |
| TRIGGEING |
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| PG(AV) | Average gate power dissipation | 2.0 | W |
| |
| PGM | Peak gate power dissipation | 10 | W |
| |
| IGM | Peak gate current | 3.0 | A |
| |
| IGT | Gate trigger current | 200 | mA | TC = 25 oC | |
| VGT | Gate trigger voltage | 3.0 | V | TC = 25 oC | |
| VGD | Gate non-trigger voltage | 0.25 | V | Tj = 125 oC | |
| SWITCHING |
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| tq | Turn-off time | 100 | ms |
| |
| Qrr | Reverse recovery charge | - |
|
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Thermal And Mechanical
| Symbol | Parameter | Values | Units | Test Conditions |
| Tj | Operating temperature | -40~125 | oC |
|
| Tstg | Storage temperature | -40~150 | oC |
|
| R th (j-c) | Thermal resistance - junction to case | 0.1 | K/W | DC operation ,Single sided cooled |
| R th (c-s) | Thermal resistance - case to sink | 0.03 | K/W | Single sided cooled |
| P | Mounting force | 48.5 | Nm |
|
| W | Weight | 530 | g | about |
OUTLINE
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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