Mr. John chang
Model No.: YZPST-R3559TD16K
Brand: YZPST
VRRM: 1600V
VDRM: 1600V
VRSM: 1700V
IRRM / IDRM: 20mA/150mA
DV/dt: 1000V/μsec
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 1000
Certificate: ISO9000
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS
high power thyristor YZPST-R3559TD16K
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
Blocking - Off State
Device Type VRRM (1) VDRM (1) VRSM (1) R3559TD16K 1600 1600 1700
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM
| 20 mA 150 mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 1000 V/msec |
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 mF capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Conducting - on state
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV) |
| 3500 |
| A | Sinewave,180o conduction,Tc=70oC |
| RMS value of on-state current | ITRMS |
| 7000 |
| A | Nominal value |
| Peak one cPSTCle surge (non repetitive) current |
ITSM |
| 42000
38000 |
| A
A | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
| I square t | I2t |
| 7.5x106 |
| A2s | 8.3 msec |
| Latching current | IL |
| 1000 |
| mA | VD = 24 V; RL= 12 ohms |
| Holding current | IH |
| 500 |
| mA | VD = 24 V; I = 2.5 A |
| Peak on-state voltage | VTM |
| 1.95 |
| V | ITM = 5000 A; Tj = 125 oC |
| Critical rate of rise of on-state current (5, 6) | di/dt |
| 800 |
| A/ms | Switching from VDRM £ 1000 V, non-repetitive |
| Critical rate of rise of on-state current (6) | di/dt |
| 300 |
| A/ms | Switching from VDRM £ 1000 V |
Gating
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM |
| 200 |
| W | tp = 40 us |
| Average gate power dissipation | PG(AV) |
| 5 |
| W |
|
| Peak gate current | IGM |
| 20 |
| A |
|
| Gate current required to trigger all units | IGT |
| 300 200 125 |
| mA mA mA | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
| Gate voltage required to trigger all units
| VGT |
0.30 | 5 4
|
| V V V | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
| Peak negative voltage | VGRM |
| 20 |
| V |
|
thyristor for phase control applications
High dV/dt thyristor
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now
