Mr. John chang
Model No.: YZPST-N2055MC280
Brand: YZPST
Supply Type: Original Manufacturer
Reference Materials: Datasheet, Photo
Place Of Origin: China
Configuration: Array
Current-breakdown: Not Applicable
Current-hold (Ih) (maximum): Not Applicable
Current-off State (maximum): Not Applicable
SCR Number, Diode: Not Applicable
Operating Temperature: -40°c ~ 125°c (Tj)
SCR Type: Not Applicable
Structure: Not Applicable
Voltage-on: Not Applicable
Voltage-gate Trigger (Vgt) (maximum): Not Applicable
Current-output (maximum): Not Applicable
VRRM: 2800V
VDRM: 2800V
VRSM: 2900V
DV/dt: 500 V/μsec
IT(AV): 2000A
ITRMS: 2000A
I2t: 3.3x106 A2s
IL: 800mA
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 100000
Transportation: Ocean,Land,Express,Others
Place of Origin: CHINA
Supply Ability: 100000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
P/N:YZPST-N2055MC280
| VRRM(1) | V DRM(1) | VRSM(1) |
| 2800 | 2800 | 2900 |
| Repetitive peak reverse leakage and off state leakage | IRRM / IDRM | 10 mA 65 mA (3) |
| Critical rate of voltage rise | dV/dt (4) | 500 V/μsec |
Conducting - on state
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV) | 2000 | A | Tc=93oC | ||
| RMS value of on-state current | ITRMS | 2000 | A | Nominal value | ||
| Peak one cPSTCle surge | ITSM | 41000 | A | 8.3 msec (60Hz),sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC | ||
| (non repetitive) current | 36000 | A | ||||
| I square t | I2t | 3.3x106 | A2s | 8.3 msec and 10.0 msec | ||
| Latching current | IL | 800 | mA | VD = 24 V; RL= 12 ohms | ||
| Holding current | IH | mA | VD = 24 V; I = 2.5 A | |||
| 400 | ||||||
| Peak on-state voltage | VTM | V | ITM = 2000 A; | |||
| 1.45 | ||||||
| Critical rate of rise of on-state current (5) | di/dt | A/μs | Switching from VDRM < 1000 V, non-repetitive | |||
| 200 |
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM | 200 | W | tp = 40 us | ||
| Average gate power dissipation | PG(AV) | 5 | W | |||
| Peak gate current | IGM | 10 | A | |||
| Gate current required to trigger all units | IGT | 300 | mA | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC | ||
| 150 | mA | |||||
| 125 | mA | |||||
| Gate voltage required to trigger all units | VGT | 5 | V | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC | ||
| 0.3 | 3 | V | ||||
| V | ||||||
| Peak negative voltage | VGRM | 5 | V |
Dynamic
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | td | 1.5 | 0.7 | μs | ITM = 50 A; VD = Rated VDRM | |
| Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 μs; tp = 20 μs | ||||||
| Turn-off time (with VR = -50 V) | 500 | 250 | μs | ITM = 1000 A; di/dt = 25 A/μs; | ||
| VR > -50 V; Re-applied dV/dt = 20 V/μs linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle > 0.01% | ||||||
| Reverse recovery charge | Qrr | μC | ITM = 1000 A; di/dt = 25 A/μs; | |||
| * | VR > -50 V |
YZPST-N2055MC280
Product Categories : Semiconductor Disc Devices(Capsule Type) > Phase Control Thyristor
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