Mr. John chang
Model No.: YZPST-2SDW100
Brand: YZPST
Certification: CE
Encapsulation Structure: Plastic Sealed Transistor
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Complementary power Darlington transistors
YZPST-2SDW100
Features
■ Complementary NPN - PNP transistors
■ Monolithic Darlington configuration
Applications
■ Audio power amplifier
■ DC-AC converter
■ Low voltage DC motor drive
■ General purpose switching applications
Description
The devices are manufactured in planar technology with [base island" layout and monolithic Darlington configuration.
Table 1. Device summary
| Order code | Marking | Package | Packaging |
| 2SDW100 | 2SDW100 |
TO-247 |
Tube |
| 2SDW200 | 2SDW200 |
1 Absolute maximun ratings
Table 2. Absolute maximum ratings
|
Symbol |
Parameter | Value |
Unit | |
| NPN | 2SDW100 | |||
| PNP | 2SDW200 | |||
| VCBO | Collector-emitter voltage (IE = 0) | 80 | V | |
| VCEO | Collector-emitter voltage (IB = 0) | 80 | V | |
| IC | Collector current | 25 | A | |
| ICM | Collector peak current (tP < 5 ms) | 40 | A | |
| IB | Base current | 6 | A | |
| IBM | Base peak current (tP < 5 ms) | 10 | A | |
| PTOT | Total dissipation at Tc ≤ 25 °C | 130 | W | |
| TSTG | Storage temperature | -65 to 150 | °C | |
| TJ | Max. operating junction temperature | 150 | °C | |
Note: For PNP type voltage and current values are negative
Table 3. Thermal data
| Symbol | Parameter | Value | Unit |
| RthJC | Thermal resistance junction-case max | 0.96 | °C/W |
2 Electrical characteristics
Tcase = 25 °C; unless otherwise specified.
|
| Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
|
ICBO | Collector cut-off current (IE = 0) |
VCE = 80 V |
|
|
0.5 |
mA |
|
ICEV | Collector cut-off current (VBE = - 0.3 V) |
VCE = 80 V |
|
|
0.1 |
mA |
|
ICEO | Collector cut-off current (IB = 0) |
VCE = 60 V |
|
|
0.5 |
mA |
|
IEBO | Emitter cut-off current (IC = 0) |
VEB = 5 V |
|
|
2 |
mA |
| VCEO(sus) (1) | Collector-emitter sustaining voltage (IB = 0) |
IC = 50 mA |
80 |
|
|
V |
|
VCE(sat)(1) |
Collector-emitter saturation voltage | IC = 5 A IB = 20 mA IC = 10 A IB = 40 mA IC = 20 A IB = 80 mA |
|
| 1.2 1.75 3.5 | V V V |
|
VBE(sat)(1) | Base-emitter saturation voltage |
C B |
|
|
3.3 |
V |
| (1) | Base-emitter voltage | I = 10 A V = 3 V | 1 |
| 3 | V |
|
hFE(1) |
DC current gain | IC = 5 A VCE = 3 V IC = 10 A VCE = 3 V IC = 20 A VCE = 3 V | 600 500 300 |
| 15000 12000 6000 |
|
| VF(1) | Diode forward voltage | IF = 10 A |
| TBD |
| V |
|
Is/b | Second breakdown current |
VCE = 25 V t = 500 ms |
|
TBD |
|
A |
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
For PNP type voltage and current values are negative.
TO-247 Mechanical data
|
Dim. | mm. | ||
| Min. | Typ | Max. | |
| A | 4.85 |
| 5.15 |
| A1 | 2.20 |
| 2.60 |
| b | 1.0 |
| 1.40 |
| b1 | 2.0 |
| 2.40 |
| b2 | 3.0 |
| 3.40 |
| c | 0.40 |
| 0.80 |
| D | 19.85 |
| 20.15 |
| E | 15.45 |
| 15.75 |
| e |
| 5.45 |
|
| L | 14.20 |
| 14.80 |
| L1 | 3.70 |
| 4.30 |
| L2 |
| 18.50 |
|
| øP | 3.55 |
| 3.65 |
| øR | 4.50 |
| 5.50 |
| S |
| 5.50 |
|
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