Communicate with Supplier? Supplier
John chang Mr. John chang
What can I do for you?
+8613805278321
Chat Now
Chat Now Contact Supplier
Cancel
YANGZHOU POSITIONING TECH CO., LTD.
Select Language
Home > Products > Semiconductor Plastic Package > Silicon Transistor > 1700V M1A045170L Silicon Carbide Power MOSFET TO-247-4L
1700V M1A045170L Silicon Carbide Power MOSFET TO-247-4L
  • 1700V M1A045170L Silicon Carbide Power MOSFET TO-247-4L
  • 1700V M1A045170L Silicon Carbide Power MOSFET TO-247-4L
  • 1700V M1A045170L Silicon Carbide Power MOSFET TO-247-4L
  • 1700V M1A045170L Silicon Carbide Power MOSFET TO-247-4L
  • 1700V M1A045170L Silicon Carbide Power MOSFET TO-247-4L

1700V M1A045170L Silicon Carbide Power MOSFET TO-247-4L

  • $39
    10-99
    Piece/Pieces
  • $31
    ≥100
    Piece/Pieces
option:
Share:
Chat Now
  • Product Description
< >
Overview
Product Attributes

Model No.: YZPST-M1A045170L

Brand: YZPST

Place Of Origin: China

VDSmax: 1700V

VGSmax: -10/+25V

VGSop: -5/+20V

ID(pluse): 160A

PD: 520W

TJ , Tstg: -55 to 175℃

TL: 260℃

Supply Ability & Additional Information

Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity: 10000000

Transportation: Ocean,Land,Express,Others

Supply Ability: 10000000

Port: SHANGHAI

Payment Type: L/C,T/T,Paypal

Incoterm: FOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid
P/N:YZPST-M1A045170L
Silicon Carbide Power MOSFET
( N Channel Enhancement Mode)
Features
High Speed Switching with Low Capacitances
High Blocking Voltage with Low On-Resistance
Easy to Parallel and Simple to Drive
Resistant to Latch-UP
Halogen Free, RoHS Compliant
Benefits
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
 
Applications
Solar Inverters
Switch Mode Power Supplies
High Voltage DC/DC Converters
Motor Drive
M1A045170L TO-247-4

Part Number

Package

Marking

M1A045170L

TO-247-4L

M1A045170L

Maximum Ratings (Tc = 25°C unless otherwise specified)
Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain-Source Voltage 1700 V VGS  = 0 V, ID  = 100 μA  
VGSmax Gate-Source Voltage -0.4 V Absolute maximum values  
VGSop Gate-Source Voltage -0.25 V Recommended operational values  
ID Continuous Drain Current 85 A VGS  = 20 V, TC = 25˚C  
55 VGS  = 20 V, TC = 100˚C
ID(pluse) Pulsed Drain Current 160 A Pulse width tP  limited by Tjmax  
PD Power Dissipation 520 W TC =25˚C, TJ =150℃  
TJ , Tstg Operating Junction and Storage Temperature -55 to 175 ℃    
TL Solder Temperature 260 ℃ 1.6mm (0.063 ”) from case for 10s  
Md Mounting Torque 1 Nn M3 or 6-32 screw  
   
8.8 lbf-in
Electrical Characteristics (Tc = 25°C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit   Test Conditions Note
V(BR)DSS Drain Drain-Source 1700   - V   VGS = 0 V, ID = 100 μA  
 
Breakdown Voltage
    2 2.6 4 V   VDS = VGS, ID = 18mA  
   
VGS(th) Gate threshold Voltage   1.9   V   VDS = VGS, ID = 18mA, TJ =150°C  
IDSS Zero Gate Voltage Drain Current   2 100 μA   VDS = 1700 V, VGS = 0 V  
IGSS Gate Source Leakage     2 uA   VGS = 20 V, VDS = 0 V  
 
Current
  Drain-Source   34 60 mΩ   VGS = 20 V, ID = 50 A  
   
RDSON On-State Resistance   66     VGS = 20 V, ID = 50A, TJ =150°C  
gfs Transconductance   16       VGS = 20 V, ID = 50A  
 
  19   S   VGS = 20 V, ID = 50A, TJ =150°C  
C Input Capacitance   4078          
oss Output Capacitance   167        
rss Reverse Capacitance   39   pF   VDS =1000V,TJ=25°C,f=1MHz
Eoss Coss Stored Energy   203   μJ      
Eon Turn on Switching Energy   1.9       VDS = 1200 V, VGS = -5/20 V, ID = 50A, Rg(ext) = 2.5Ω,  
     
Eoff Turn off Switching Energy   0.3   mJ   TJ=150°C
tdon Turn on delay time   21        
     
tr Rise time   46       VDS = 1200 V, VGS = -5/20 V, ID = 50A, Rg(ext)= 2.5Ω
tdoff Turn off delay time   50        
tf Fall time   19   ns    
Rgint Internal Gate Resistance   2.6       VAC =25mV, f=1MHz  
Qgs Gate to Source Charge   44       VDS = 1200 V, VGS = -5/20 V, ID = 50A  
Qgd Gate to Drain Charge   84    
Qg Total Gate Charge   248   nC

Electrical Characteristics (Tc = 25°C unless otherwise specified)

Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
VSD Diode Forward Voltage   6.1 - V VGS = -5 V, ISD = 25 A  
  5.2   VGS = -5 V, ISD = 25 A,TJ =150°C  
I Continuous Diode Forward Current     75 A VGS = -5V, Tc=25°C  
S
trr Reverse Recovery Time   126   ns VR= 1200 V, VGS = -5V, ID = 50A, di/dt=1400A/μS,, TJ =150°C  
Qrr Reverse Recovery Charge   1360   nC
Irrm Peak Reverse Recovery Current   19   A
package TO-247-4

 

Product Categories : Semiconductor Plastic Package > Silicon Transistor

Download
Home > Products > Semiconductor Plastic Package > Silicon Transistor > 1700V M1A045170L Silicon Carbide Power MOSFET TO-247-4L
Hot Products
Email to this supplier
  • *Subject:
  • *To:
    Mr. John chang
  • *Email:
  • *Message:
    Your message must be between 20-8000 characters
Contact Now
Send Inquiry
*
*

Related Products List
Power MOSFET TO-247-4L 1700V Silicon Carbide Power MOSFET M1A045170L Power MOSFET SiC MOSFET TO247-4L N-Channel SiC Power MOSFET TO-247-4 Power MOSFET

Home

Product

Whatsapp

About Us

Inquiry
苏ICP备05018286号-1
Please Leave Us A Message

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Upload Attachment
Send