Mr. John chang
Model No.: YZPST-D100H065AT1S3
Place Of Origin: China
VCES: 650V
VGES: ±20V
VCEsat, Tvj=25: 1.75V
IC(TC=100℃ ): 100A
ICM: 200A
Tvjmax: 175 ℃
Package: TO247-3L
IC(TC=25℃): 125A
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Trench Field-Stop Technology IGBT
YZPST-D100H065AT1S3
Features
650V, 100A
VCE(sat)(typ.) =1.75V@VGE=15V, IC=100A
Maximum Junction Temperature 175 
Pb-free Lead Plating; RoHS Compliant
Applications
Solar Converters
Uninterrupted Power Supply
Welding Converters
Mid to High Range Switching Frequency Converters
Key Performance and Package Parameters
| Order codes | VCE | IC | VCEsat, Tvj=25 | Tvjmax | Marking | Package |
| D100H065AT1S3 | 650V | 100A | 1.75V | 175 ℃ | D100H65AT1 | TO247-3L |
Absolute Maximum Ratings
Symbol Parameter Value Unit VCES Collector-Emitter Voltage 650 V VGES Gate-Emitter Voltage ±20 V IC Continuous Collector Current (TC=25 ℃ ) 125 A Continuous Collector Current (TC=100 ℃ ) 100 A ICM Pulsed Collector Current (Note 1) 200 A Diode Forward Current (TC=25 ℃ ) 125 A IF Diode Forward Current (TC=100 ℃ ) 100 A Maximum Power Dissipation (TC=25 ℃ ) 385 W PD Maximum Power Dissipation (TC=100 ℃ ) 192 W TJ Operating Junction Temperature Range -40 to 175 ℃ TSTG Storage Temperature Range -55 to 150 ℃
Electrical Characteristics (Tc=25
unless otherwise noted.)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVCES | Collector-Emitter | VGE=0V, IC=200uA | 650 | V | ||
| Breakdown Voltage | --- | --- | ||||
| ICES | Collector-Emitter Leakage Current | VCE=650V, VGE=0V | 1 | mA | ||
| --- | --- | |||||
| Gate Leakage Current, Forward | VGE=20V, VCE=0V | 600 | nA | |||
| --- | --- | |||||
| IGES | Gate Leakage Current, Reverse | VGE=-20V, VCE=0V | 600 | nA | ||
| --- | --- | |||||
| VGE(th) | Gate Threshold Voltage | VGE=VCE , IC=750uA | 4.2 | --- | 6 | V |
| VCE(sat) | Collector-Emitter | VGE=15V, IC=100A, Tj=25 ℃ | --- | 1.75 | 2.2 | V |
| Saturation Voltage | VGE=15V, IC=100A, Tj=125 ℃ | --- | 2.05 | --- | V | |
| td(on) | Turn-on Delay Time | --- | 35 | --- | ns | |
| tr | Turn-on Rise Time | VCC=400V | --- | 155 | --- | ns |
| td(off) | Turn-off Delay Time | VGE=±15V | --- | 188 | --- | ns |
| tf | Turn-off Fall Time | IC=100A | --- | 69 | --- | ns |
| Eon | Turn-on Switching Loss | RG=8 | --- | 4.35 | --- | mJ |
| Eoff | Turn-off Switching Loss | Inductive Load | --- | 1.11 | --- | mJ |
| Ets | Total Switching Loss | TC=25 ℃ | --- | 5.46 | --- | mJ |
| Cies | Input Capacitance | VCE=25V | --- | 7435 | --- | pF |
| Coes | Output Capacitance | VGE=0V | --- | 237 | --- | pF |
| Cres | Reverse Transfer | f =1MHz | 128 | pF | ||
| Capacitance | --- | --- |
Symbol Parameter Conditions Min. Typ. Max. Unit IF=100A, Tj=25 ℃ --- 1.65 2.2 V VF Diode Forward Voltage IF=100A, Tj=150 ℃ --- 1.4 --- V trr Diode Reverse Recovery Time 201 ns VR=400V --- --- IF=100A Irr Diode peak Reverse dIF/dt=200A/us 19 A Recovery Current TC=25 ℃ --- --- Qrr Diode Reverse Recovery Charge 2.45 uC --- ---
Note1 
Repetitive rating, pulse width limited by maximum junction temperature
Package Information
Product Categories : Semiconductor Plastic Package > Silicon Transistor
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