Mr. John chang
Model No.: YZPST-80N03
Brand: YZPST
Type: Intrinsic Semiconductor
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 100
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 500
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Electronic cigarette lighter Mosfet
YZPST-80N03
| VDSS 30V RDS(ON) 4mΩ(max.)@ VGS=10V RDS(ON) 6mΩ(max.)@ VGS=4.5V ID 100A |
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| Description | DFN5X6-8L |
|
YZPST 80N03 uses advanced Trench technology and designs to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. |
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| Applications | Features |
| ￭ Lithium-Ion Secondary Batteries ￭ Load Switch ￭ DC-DC converters and Off-line UPS | ￭ Low On-Resistance ￭ Low Input Capacitance ￭ Low Miller Charge ￭ Low Input / Output Leakage |
| Absolute Maximum Ratings (TA=25°C unless otherwise noted) | |||
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 30V | V |
| Gate-Source Voltage | VGSS | ±20V | V |
| Drain Current-Continuous @ TC=25℃ NOTE1, 6 |
ID | 100 | A |
| Drain Current-Continuous @ TC=100℃ NOTE1, 6 | 80 | A | |
| Drain Current-Continuous @ TA=25℃ NOTE1 |
ID | 20 | A |
| Drain Current-Continuous @ TA=100℃ NOTE1 | 15 | A | |
| Drain Current-Pulsed NOTE 2 | IDM | 216 | A |
| Avalanche Current | IAS | 53.8 | A |
| Avalanche Energy NOTE 3 | EAS | 144.7 | mJ |
| Maximum Power Dissipation @ TC=25℃ NOTE4 |
PD | 69 | W |
| Maximum Power Dissipation @ TA=25℃ NOTE4 | 2 | W | |
| Storage Temperature Range | TSTG | -55 to 150°C | °C |
| Operating Junction Temperature Range | TJ | -55 to 150°C | °C |
| Thermal Resistance Ratings | ||||||
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Maximum Junction-to-Ambient NOTE1 | RθJA | Steady State | - | - | 62 | °C/W |
| Maximum Junction-to-Case NOTE1 | RθJC | Steady State | - | - | 1.8 | °C/W |
| Electrical Characteristics(TJ=25°C unless otherwise noted) | ||||||
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , IDS=250uA | 30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=24V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20V , VDS=0V | - | - | ±100 | nA |
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, IDS=250uA | 1.2 | - | 2.5 | V |
|
Drain-Source On-Resistance NOTE2 |
RDS(ON) | VGS=10V , IDS=30A | - | - | 4 | mΩ |
| VGS=4.5V , IDS=20A | - | - | 6 | mΩ | ||
| Forward Transconductance | gfs | VDS=5V , ID=30A | - | 26.5 | - | S |
| Gate Resistance | Rg | VDS=0V , VGS=0V , f=1MHz | - | 1.4 | - | Ω |
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | Ciss |
VDS=15V, VGS=0V, f=1MHz | - | 3080 | - |
pF |
| Output Capacitance | Coss | - | 410 | - | ||
| Reverse Transfer Capacitance | Crss | - | 316 | - | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | Td(on) |
VDS=15V, VGS=10V, ID=15A , RGEM=3.3Ω | - | 9.6 | - |
ns |
| Rise Time | tr | - | 20.8 | - | ||
| Turn-Off Delay Time | Td(off) | - | 58 | - | ||
| Fall Time | tf | - | 16 | - | ||
| Total Gate Charge at 4.5V | Qg |
VDS=15V, IDS=15A, VGS=4.5V | - | 32 | - |
nC |
| Gate to Source Gate Charge | Qgs | - | 9.1 | - | ||
| Gate to Drain "Miller" Charge | Qgd | - | 12.2 | - | ||
| SWITCHING CHARACTERISTICS | ||||||
| Drain-Source Diode Forward Voltage 2 | VSD | VGS=0V, IS=1A | - | - | 1.0 | V |
| Continuous Source Current NOTE1, 5 | IS |
VG=VD=0V , Force Current | - | - | 100 | A |
| Pulsed Source Current NOTE2,5 | ISM | - | - | 216 | A | |
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH,IAS=53.8A
4. The power dissipation is limited by 175℃ junction temperature
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
6. Package limitation current is 85A.wer dissipation.
Product Categories : Semiconductor Plastic Package > Silicon Transistor
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