Mr. John chang
Model No.: YZPST-2N3904
Place Of Origin: China
Collector-Base Voltage: 60V
Collector-Emitter Voltage: 40V
Emitter-Base Voltage: 6V
Collector Current -Continuous: 0.2A
Collector Power Dissipation: 0.625W
Operation Junction And Storage Temperat: -55-150℃
Productivity: 10000000
Transportation: Ocean,Land,Air
Supply Ability: 10000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
TO-92 Plastic-Encapsulate Transistors
YZPST-2N3904 TRANSISTOR (NPN)
the type designation MMBT3904
| Part Number | Package | Packing Method | Pack Quantity |
| 2N3904 | T0-92 | BuIk | 1000pcs/Bag |
| 2N3904-TA | T0-92 | Tape | 2000pcs/Box |
MAXIMUM RATINGS (Ta=25'℃ unless otherwise noted)
Symbo1 Parameter Va1ue Unit VCB0 Collector-Base Voltage 60 V VCE0 Collector-Emitter Voltage 40 V VEB0 Emitter-Base Voltage 6 V C Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.625 W TJ,Tstg Operation Junction and Storage Temperature Range -205 C
=25℃ unless otherwise specified
Parameter Symbo1 Test Min Typ Max Unit conditions Co11ector﹒base V(BR)CBO IC=10ΚA, IE=0 60 V breakdown vo1tage Co11ector﹒emitter V(BR)CEO IC= 1mA , IB=0 40 V breakdown vo1tage Emitter﹒base V(BR)EBO IE= 10ΚA, IC=0 6 V breakdown vo1tage Co11ector cut﹒off ICBO VCB=60V, IE=0 0.1 UA current Co11ector ICEX VCE=30V, VEB(off)=3V 0.05 UA cut﹒off current Emitter IEBO VEB= 5V, IC=0 0.1 UA cut﹒off current FE1 VCE=1V, IC=10mA 100 400 DC current FE2 VCE=1V, IC=50mA 60 gain FE3 VCE=1V, IC=100mA 30 Co11ector﹒emitter VCE(sat) IC=50mA, IB=5mA 0.3 V saturation vo1tage Base﹒emitter VBE(sat) IC=50mA, IB=5mA 0.95 V saturation vo1tage Transition T VCE=20V,IC=10mA,f=100MHz 300 MHZ frequency De1ay td VCC=3V,VBE=0.5V, 35 ns Time IC=10mA,IB1=1mA Rise tr 35 ns Time Storage ts VCC=3V, IC=10mA 200 ns Time IB1=IB2=1mA Fa11 tf 50 ns Time
| Symbo1 | Dimensions | Dimensions | ||
| n | ln | |||
| Mi11imeters | lnches | |||
| Min | Max | Min | Max | |
| A | 3.3 | 3.7 | 0.13 | 0.146 |
| A1 | 1.1 | 1.4 | 0.043 | 0.055 |
| b | 0.38 | 0.55 | 0.015 | 0.022 |
| c | 0.36 | 0.51 | 0.014 | 0.02 |
| D | 4.3 | 4.7 | 0.169 | 0.185 |
| D1 | 3.43 | 0.135 | ||
| E | 4.3 | 4.7 | 0.169 | 0.185 |
| e | 1.270 TYP | 0.050 TYP | ||
| e1 | 2.44 | 2.64 | 0.096 | 0.104 |
| L | 14.1 | 14.5 | 0.555 | 0.571 |
| Κ | 1.6 | 0.063 | ||
| h | 0 | 0.38 | 0 | 0.015 |
Product Categories : Semiconductor Plastic Package > Silicon Transistor
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