Mr. John chang
Model No.: YZPST-BD139
Brand: YZPST
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Complementary low voltage transistor
YZPST-BD139
Features
■ Products are pre-selected in DC current gain
Application
■ General purpose
Description
These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140.
Table 1. Device summary
| Order codes | Marking | Package | Packaging |
| BD135 | BD135 |
SOT-32 |
Tube |
| BD135-16 | BD135-16 | ||
| BD136 | BD136 | ||
| BD136-16 | BD136-16 | ||
| BD139 | BD139 | ||
| BD139-10 | BD139-10 | ||
| BD139-16 | BD139-16 | ||
| BD140 | BD140 | ||
| BD140-10 | BD140-10 | ||
| BD140-16 | BD140-16 |
Table 2. Absolute maximum ratings
|
Symbol |
Parameter | Value |
Unit | |||
| NPN | PNP | |||||
| BD135 | BD139 | BD136 | BD140 | |||
| VCBO | Collector-base voltage (IE = 0) | 45 | 80 | -45 | -80 | V |
| VCEO | Collector-emitter voltage (IB = 0) | 45 | 80 | -45 | -80 | V |
| VEBO | Emitter-base voltage (IC = 0) | 5 | -5 | V | ||
| IC | Collector current | 1.5 | -1.5 | A | ||
| ICM | Collector peak current | 3 | -3 | A | ||
| IB | Base current | 0.5 | -0.5 | A | ||
| PTOT | Total dissipation at Tc ≤ 25 °C | 12.5 | W | |||
| PTOT | Total dissipation at Tamb ≤ 25 °C | 1.25 | W | |||
| Tstg | Storage temperature | -65 to 150 | °C | |||
| Tj | Max. operating junction temperature | 150 | °C | |||
Table 3. Thermal data
| Symbol | Parameter | Max value | Unit |
| Rthj-case | Thermal resistance junction-case | 10 | °C/W |
| Rthj-amb | Thermal resistance junction-ambient | 100 | °C/W |
| ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Table 4. On/off states
|
Symbol |
Parameter |
Polarity |
Test conditions | Value |
Unit | ||
| Min. | Typ. | Max. | |||||
|
ICBO |
Collector cut-off current (I =0) |
NPN | VCB = 30 V VCB = 30 V, TC = 125 °C |
|
| 0.1 10 | µA µA |
|
PNP | VCB = -30 V VCB = -30 V, TC = 125 °C |
|
| -0.1 -10 | µA µA | ||
|
IEBO | Emitter cut-off current (I =0) | NPN | VEB = 5 V |
|
| 10 | µA |
| PNP | VEB = -5 V |
|
| -10 | µA | ||
|
VCEO(sus)(1) |
Collector-emitter sustaining voltage (IB=0) |
NPN | IC = 30 mA BD135 BD139 |
45 80 |
|
|
V V |
|
PNP | IC = -30 mA BD136 BD140 |
-45 -80 |
|
|
V V | ||
|
VCE(sat) (1) |
Collector-emitter saturation voltage | NPN | IC = 0.5 A, IB = 0.05 A |
|
| 0.5 | V |
| PNP | IC = -0.5 A, IB = -0.05 A |
|
| -0.5 | V | ||
|
VBE (1) |
Base-emitter voltage | NPN | IC = 0.5 A, VCE = 2 V |
|
| 1 | V |
| PNP | IC = -0.5 A, VCE = -2 V |
|
| -1 | V | ||
|
hFE (1) |
DC current gain |
NPN | IC = 5 mA, VCE = 2 V IC = 150 mA, VCE = 2 V IC = 0.5 A, VCE = 2 V | 25 40 25 |
|
250 |
|
|
PNP | IC = -5 mA, VCE = -2 V IC = -150 mA, VCE = -2 V IC = -0.5 A, VCE = -2 V | 25 40 25 |
|
250 |
| ||
|
hFE (1) |
hFE groups |
NPN | IC = 150 mA, VCE = 2 V BD139-10 BD135-16/BD139-16 |
63 100 |
|
160 250 |
|
|
PNP | IC = -150 mA, VCE = -2 V BD140-10 BD136-16/BD140-16 |
63 100 |
|
160 250 |
| ||
Product Categories : Semiconductor Plastic Package > Silicon Transistor
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