Mr. John chang
Model No.: YZPST-BC557
Brand: YZPST
Place Of Origin: China
Collector-Base Voltage: -50V
Collector-Emitter Voltage: -45V
Emitter-Base Voltage: -5V
Collector Current-Continuous: -0.1A
Collector Power Dissipation: 625mW
RθJA: 200τ/W
TJ,Tstg: -55~+150T
Productivity: 100000
Transportation: Ocean,Land
Supply Ability: 100000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Complement to BC546,BC547,BC548
ORDERING INFORMATION
Part Number Package Packing Method Pack Quantity BC556 TO-92 Bulk 1000pcs/Bag BC556-TA TO-92 Tape 2000pcs/Box BC557 TO-92 Bulk 1000pcs/Bag BC557-TA TO-92 Tape 2000pcs/Box BC558 TO-92 Bulk 1000pcs/Bag BC558-TA TO-92 Tape 2000pcs/Box
MAXIMUM RATINGS (Ta=25τ unless otherwise noted)
| Symbol | Parameter | Value | Unit | |
| BC556 | -80 | |||
| VCBO | Collector-Base Voltage | BC557 | -50 | V |
| BC558 | -30 | |||
| BC556 | -65 | |||
| VCEO | Collector-Emitter Voltage | BC557 | -45 | V |
| BC558 | -30 | |||
| VEBO | Emitter-Base Voltage | -5 | V | |
| IC | Collector Current-Continuous | -0.1 | A | |
| PC | Collector Power Dissipation | 625 | mW | |
| RθJA | Thermal Resistance from Junction to Ambient | 200 | τ/W | |
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55~+150 | τ | |
Ta =25 τ unless otherwise specified
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit | |
| Collector-base | BC556 | -80 | |||||
| breakdown voltage | BC557 | V(BR)CBO | IC= -0.1mA,IE=0 | -50 | V | ||
| BC558 | -30 | ||||||
| Collector-emitter | BC556 | -65 | |||||
| breakdown voltage | BC557 | V(BR)CEO | IC=-2mA,IB=0 | -45 | V | ||
| BC558 | -30 | ||||||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100μA,IC=0 | -5 | V | |||
| BC556 | VCB=-70V,IE=0 | -0.1 | μA | ||||
| Collector cut-off current | BC557 | ICBO | VCB=-45V,IE=0 | -0.1 | μA | ||
| BC558 | VCB=-25V,IE=0 | -0.1 | μA | ||||
| BC556 | VCE=-60V,IB=0 | -0.1 | μA | ||||
| Collector cut-off current | BC557 | ICEO | VCE=-40V,IB=0 | -0.1 | μA | ||
| BC558 | VCE=-25V,IB=0 | -0.1 | μA | ||||
| Emitter cut-off current | IEBO | VEB=-5V,IC=0 | -0.1 | μA | |||
| DC current gain | * | VCE=-5V, IC=-2mA | 120 | 800 | |||
| hFE | |||||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-10mA,IB=-0.5mA | -0.3 | V | |||
| IC=-100mA,IB=-5mA | -0.65 | V | |||||
| Base-emitter saturation voltage | VBE(sat) | IC=-10mA,IB=-0.5mA | -0.8 | V | |||
| IC=-100mA,IB=-5mA | -1 | V | |||||
| Base-emitter voltage | VBE | VCE=-5V, IC=-2mA | -0.55 | -0.7 | V | ||
| VCE=-5V, IC=-10mA | -0.82 | V | |||||
| Collector output capacitance | Cob | VCB=-10V,IE=0, f=1MHz | 6 | pF | |||
| BC556 | 150 | MHz | |||||
| Transition frequency | BC557 | fT | VCE=-5V,IC=-10mA, f=100MHz | 150 | MHz | ||
| BC558 | 150 | MHz | |||||
CLASSIFICATION of hFE
| RANK | A | B | C |
| RANGE | 120-220 | 180-460 | 420-800 |
TO-92 Package Outline Dimensions
Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.3 3.7 0.13 0.146 A1 1.1 1.4 0.043 0.055 b 0.38 0.55 0.015 0.022 c 0.36 0.51 0.014 0.02 D 4.3 4.7 0.169 0.185 D1 3.43 0.135 E 4.3 4.7 0.169 0.185 e 1.270 TYP 0.050 TYP e1 2.44 2.64 0.096 0.104 L 14.1 14.5 0.555 0.571 。 1.6 0.063 h 0 0.38 0 0.015
Product Categories : Semiconductor Plastic Package > Silicon Transistor
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