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Home > Products > Semiconductor Plastic Package > Silicon Transistor > TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16
  • TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16
  • TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16
  • TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16
  • TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16
  • TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16

TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16

  • $0.03
    10000-99999
    Piece/Pieces
  • $0.02
    ≥100000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-BD140-16

BrandYZPST

ApplicationMicrophone, Not Applicable

Supply TypeOriginal Manufacturer, Odm, Other

Reference MaterialsDatasheet, Photo, Other

Package TypeSurface Mount

Installation MethodThrough Hole, Not Applicable

FET FunctionNot Applicable

ConfigurationNot Applicable

VCBO-80V

VCEO-80V

VEBO-5V

IC-1.5A

IB-0.5A

Ptot12.5W

Tj150℃

Tstg-55~150℃

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity1000000000

TransportationOcean,Land,Others

Place of OriginCHINA

Supply Ability100000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

PNP Silicon Transistor 

YZPST-BD140-16

TO-126 BD140-16 is silicon epitaxial planar PNP transistors complementary NPN types are the BD139-16


DESCRIPTION

The BD140-16 is silicon epitaxial planar PNP transistors

in Jedec TO-126 plastic package, designed for audio

amplifiers and drivers utilizing complementary or quasi

compementary circuits.

The complementary NPN types are the BD139-16

Yzpst Bd140 16 Jpg


ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-80

V

Collector-Emitter Voltage

VCEO

-80

V

Emitter-Base Voltage

VEBO

-5.0

V

Collector Current

IC

-1.5

A

Base Current

IB

-0.5

A

Total Dissipation at

Ptot

12.5

W

Max. Operating Junction Temperature

Tj

150

oC

Storage Temperature

Tstg

-55~150

oC

ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)

Parameter Symbol Test   Conditions Min. Typ. Max. Unit
Collector Cut-off Current ICBO VCB  = -80V, IE  = 0 -10 μA
Emitter Cut-off Current IEBO
VEB  = -5.0V, IC  = 0 -10 μA
VCEO
Collector-Emitter Sustaining Voltage IC  = -1.0mA, IB  = 0 -80 V
VCE  = -2.0V, IC  = -0.15A 100 250
DC Current Gain hFE
VCE  = -2.0V, IC  = -0.5A 100
VCE(sat)
Collector-Emitter Saturation Voltage IC  = -0.5A, IB  = -0.05A -0.5 V
VBE
Base-Emitter Voltage IC  = -0.5A, VCE  = -2.0V -1 V
fT
Transition Frequency VCE  = -5.0V,IC  = -50mA 80 MHz



Product Categories : Semiconductor Plastic Package > Silicon Transistor

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