Mr. John chang
Model No.: YZPST-MJD31C
Brand: YZPST
Place Of Origin: China
VCBO: 100V
VCEO: 100V
VEBO: 5V
IC: 3A
ICM: 5A
IB: 1A
PTOT: 15W
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 10000000000
Transportation: Ocean,Land,Others
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
The MJD31C is Silicon NPN power transistors ，designed for medium power linear switching applications.
ABSOLUTE MAX I MUM RATINGS
Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Continuous Collector Current 3 A ICM Collector current-Pulse 5 A IB Base Current 1 A PTOT Total dissipation at Tcase=25 ℃ 15 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55〜 150 ℃
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
| Symbol | Parameter | Test Condition | Value | Unit | ||
| Min | Type | Max | ||||
| ICEO | Collector Cutoff Current | VCE= 60 V |
|
| 0.3 | mA |
| IEBO | Emitter Cutoff Current | VEB= 5 V |
|
| 1 | mA |
| VCEO（SUS） | Collector-Emitter Sustaining Voltage | IC= 30mA | 100 |
|
| V |
| VCEsat | Collector-Emitter Saturation Voltage | IC=3A IB=0.375A |
|
| 1.2 | V |
| VBE | Base-Emitter On Voltage | IC=3A ; VCE=4V |
|
| 1.8 | V |
| hFE- 1 | DC current gain | IC= 1A ; VCE=4V | 25 |
|
|
|
| hFE-2 | DC current gain | IC=3A ; VCE=4V | 10 |
| 50 |
|
| fT | Transiton frequency | IC=0.5A ; VCE= 10V | 3 |
|
| MHz |
PACKAGE MECHANICAL DATA
Product Categories : Semiconductor Plastic Package > Silicon Transistor
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