Mr. John chang
Model No.: YZPST-2SA1930
Brand: YZPST
Place Of Origin: China
VCBO: -180V
VCEO: -180V
VEBO: -5V
IC: -2A
IB: -1A
PC: 2W
PC(Tc=25℃): 20W
Tj: 150℃
Tstg: -55～150℃
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 1000000
Transportation: Ocean,Land
Place of Origin: CHINA
Supply Ability: 1000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Silicon PNP transistor in a TO-220F Plastic Package.
Features
High fT, complementary pair with 2SC5171.
TO-220F 2SA1930 Silicon PNP transistor High fT complementary pair with 2SC5171
Absolute Maximum Ratings(Ta=25℃)
| Parameter | Symbol | Rating | Unit |
| Collector to Base Voltage | VCBO | -180 | V |
| Collector to Emitter Voltage | VCEO | -180 | V |
| Emitter to Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous | IC | -2.0 | A |
| Base Current | IB | -1.0 | A |
| Collector Power Dissipation | PC | 2.0 | W |
| Collector Power Dissipation | PC(Tc=25℃) | 20 | W |
| Junction Temperature | Tj | 150 | ℃ |
| Storage Temperature Range | Tstg | -55～150 | ℃ |
Electrical Characteristics(Ta=25℃)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit
|
| Collector-Emitter Breakdown Voltage | VCEO | IC=-10mA IB=0 | -180 |
|
| V |
| Collector Cut-Off Current | ICBO | VCB=-180V IE=0 |
|
| -5.0 | μA |
| Emitter Cut-Off Current | IEBO | VEB=-5.0V IC=0 |
|
| -5.0 | μA |
| DC Current Gain | hFE(1) | VCE=-5.0V IC=-100mA | 100 |
| 320 |
|
| hFE(2) | VCE=-5.0V IC=-1.0A | 50 |
|
|
| |
| Collector to Emitter Saturation Voltage | VCE(sat) | IC=-1.0A IB=-100mA |
| -0.24 | -1.0 | V |
| Base to Emitter Voltage | VBE | VCE=-5.0V IC=-1.0A |
| -0.68 | -1.5 | V |
| Transition Frequency | fT | VCE=-5.0V IC=-300mA |
| 200 |
| MHz |
| Collector output capacitance | Cob | VCB=-10V IE=0 f=1.0MHz |
| 26 |
| pF |
Package Dimensions
Product Categories : Semiconductor Plastic Package > Silicon Transistor
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