Mr. John chang
Model No.: YZPST-BD139-16
Brand: YZPST
Place Of Origin: China
VCBO: 80V
VCEO: 80V
VEBO: 5.0V
IC: 1.5A
IB: 0.5A
Ptot: 12.5W
Tj: 150℃
Tstg: -55~150℃
Productivity: 1000000000
Transportation: Ocean,Land
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: T/T,Paypal
Incoterm: FOB,CFR,CIF
NPN Silicon Transistor P/N:YZPST-BD139-16
BD139-16 NPN silicon transistor complementary PNP types are the BD140-16
The complementary PNP types are the BD140-16
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
| Parameter | Symbol | Value | Unit |
| Collector-Base Voltage | VCBO | 80 | V |
| Collector-Emitter Voltage | VCEO | 80 | V |
| Emitter-Base Voltage | VEBO | 5.0 | V |
| Collector Current | IC | 1.5 | A |
| Base Current | IB | 0.5 | A |
| Total Dissipation at | Ptot | 12.5 | W |
| Max. Operating Junction Temperature | Tj | 150 | oC |
| Storage Temperature | Tstg | -55~150 | oC |
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB = 80V, IE = 0 10 μA — — Emitter Cut-off Current IEBO VEB = 5.0V, IC = 0 10 μA VCEO Collector-Emitter Sustaining Voltage IC = 1.0mA, IB = 0 80 — — V VCE = 2.0V, IC = 0.15A 100 250 DC Current Gain hFE VCE = 2.0V, IC = 0.5A 100 — — VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.05A 0.5 V VBE Base-Emitter Voltage IC = 0.5A, VCE = 2.0V 1 V fT Transition Frequency VCE = 5V,IC = 50mA 80 MHz
Product Categories : Semiconductor Plastic Package > Silicon Transistor
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