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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > Low holding and latching current TO-252 600V BT136S-600 4A triac
  • Low holding and latching current TO-252 600V BT136S-600 4A triac
  • Low holding and latching current TO-252 600V BT136S-600 4A triac
  • Low holding and latching current TO-252 600V BT136S-600 4A triac
  • Low holding and latching current TO-252 600V BT136S-600 4A triac
  • Low holding and latching current TO-252 600V BT136S-600 4A triac
  • Low holding and latching current TO-252 600V BT136S-600 4A triac

Low holding and latching current TO-252 600V BT136S-600 4A triac

  • $0.08
    1000-9999
    Piece/Pieces
  • $0.06
    ≥10000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-BT136S-600

BrandYZPST

Place Of OriginChina

IT(RMS)4A

VDRM600V

VRRM600V

VTM1.7V

Tstg-40~150℃

Tj-40~125℃

ITSM25A

I2t3.1A2s

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity10000000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability10000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

P/N: YZPST-BT136 Series 4A Triacs

YZPST-BT136S-600

DESCRIPTION:

With low holding and latching current, BT136 Series triacs are especially recommended for    use on middle and small resistance type power load.

YZPST-BT136 TO-220

 

MAIN FEATURES:

symbol

value

unit

IT(RMS)

4

A

VDRM/VRRM

600/800

V

VTM

≤1.7

V

ABSOLUTE MAXIMUM RATINGS:

Parameter Symbol Value Unit
Storage junction temperature range Tstg -40~150
Operating junction temperature range Tj -40~125
Repetitive peak off-state voltage (Tj=25) VDRM 600/800 V
Repetitive peak reverse voltage (Tj=25) VRRM 600/800 V
RMS on-state current IT(RMS) 4 A
Non repetitive surge peak on-state current      
(full cycle, F=50Hz) ITSM 25 A
I2t value for fusing (tp=10ms) I2t 3.1 A2s
Critical rate of rise of on-state current (IG=2 × IGT)   - - 50  
dI/dt 10 A/ μs

 

Peak gate current IGM 2 A
Average gate power dissipation PG(AV) 0.5 W
Peak gate power PGM 5 W

ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)

Parameter       Value  
Test Condition Quadrant T D E Unit
    Ⅰ- Ⅱ-Ⅲ   5 5 10  
IGT VD=12V,   5 10 25 mA
VGT RL=33Ω Ⅰ- Ⅱ-Ⅲ-Ⅳ MAX 1.3 V
VGD VD=VDRM Ⅰ- Ⅱ-Ⅲ-Ⅳ MIN 0.2 V
IH IT=100mA MAX 5 10 20 mA
    Ⅰ-Ⅲ-Ⅳ   8 10 20  
IL IG=1.2IGT MAX 12 15 35 mA
  VD=0.66×VDRM   Tj=125 Gate open          
dV/dt MIN 10 20 50 V/ µs

STATIC CHARACTERISTICS

Symbol Test Condition Value Unit
VTM ITM=5A   tp=380μs Tj=25 MAX 1.7 V
IDRM   Tj=25   5 µA
IRRM VDRMVRRM Tj= 125 MAX 0.5 mA

 

THERMAL RESISTANCES

Symbol Test Condition Value Unit
    TO-252-4R 2.8  
Rth(j-c) junction to case(AC) TO-220B(Non-Ins)/ TO-220C 2.6 /W

PACKAGE MECHANICAL DATA

BT136S-600 PACKAGE

 

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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