Mr. John chang
Model No.: YZPST-KS100A600V
Brand: YZPST
Certification: RoHS
Packaging: For more detailed product information and transaction information, please contact our email address : info@yzpst.com
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Ceramic stud triacs YZPST-KS100A600V
Maximum Ratings And Characteristics Symbol Parameter Values Units Test Conditions ON-STATE ITAV Mean on-state current - A Sinewave,180° conduction,Tc=100°C ITRMS RMS value of on-state current 100 A Nominal value ITSM Peak one cycle surge (non repetitive) current 900 A 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 °C I2t I square t 4050 A2s 8.3 msec and 10.0 msec IL Latching current 100 mA VD = 12 V; RL= 12 ohms IH Holding current 30 mA VD = 12 V; I = 1 A VTM Peak on-state voltage 2.0 V ITM = 150 A; Duty cycle ≤ 0.01%; Tj = 25 °C di/dt Critical rate of rise of on-state current non-repetitive 300 A/µs Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM repetitive 50 BLOCKING VDRM VRRM Repetitive peak off state voltage Repetitive peak reverse voltage 600 V VDSM VRSM Non repetitive peak off state voltage Non repetitive peak reverse voltage 700 V IDRM IRRM Repetitive peak off state current Repetitive peak reverse current 10 mA Tj = 125 °C ,VRRM VDRM applied dV/dt Critical rate of voltage rise 100 V/µs TJ=TJmax, linear to 80% rated VDRM TRIGGEING PG(AV) Average gate power dissipation - W PGM Peak gate power dissipation - W IGM Peak gate current - A IGT Gate trigger current 200 mA TC = 25 °C VGT Gate trigger voltage 3.0 V TC = 25 °C VT(T0) Treshold voltage 1 V rT Slope resistance 2.4 mΩ VGD Gate non-trigger voltage 0.2 V Tj = 125 °C SWITCHING tq Turn-off time - µs Tj = 125 °C td Delay time - Gate current 1A, di/dt=1A/μs, Vd=0.67%VDRM, TJ=25 °C Qrr Reverse recovery charge - Thermal And Mechanical Symbol Parameter Values Units Test Conditions Tj Operating temperature -40~125 °C Tstg Storage temperature -40~150 °C R th (j-c) Thermal resistance - junction to case 0.4 °C/W DC operation ,Single sided cooled R th (c-s) Thermal resistance - case to sink 0.08 °C/W Single sided cooled P Mounting force - Nm W Weight - g about
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Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
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