Mr. John chang
Model No.: YZPST-SG50AA80
Brand: YZPST
Certification: RoHS
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Triac YZPST-SG50AA80
SG50AA80 two-way scr triac 800V
TRIAC(ISOLATED TYPE)
SG50AA are isolated molded triacs suitable for wide range of applications like copier, microwave oven, solid state switch, motor control, light control and heater control.● IT(AV) 50A
● High surge capability 330A
● Tab Terminals
|
Symbol |
Item |
|
|
|
Unit |
| SG50AA80 | SG50AA120 | SG50AA160 | |||
| VDRM | Repetitive Peak Off-State Voltage | 800 | 1200 | 1600 | V |
|
Symbol |
Item |
Conditions |
Ratings |
Unit |
| IT(RMS) | R.M.S. On-State Current | Tc=58℃ | 50 | A |
| ITSM | Surge On-State Current | One cycle, 50Hz/60Hz, peak, non-repetitive | 450 | A |
| I2t | I2t | Value for one cycle of surge current | 730 | A2S |
|
PGM |
Peak Gate Power Dissipation |
|
10 |
W |
| PG(AV) | Average Gate Power Dissipation |
| 1 | W |
| IGM | Peak Gate Current |
| 3 | A |
| VGM | Peak Gate Voltage |
| 10 | V |
| di/dt | Critical Rate of Rise of On-State Current | IG=100mA,Tj=25℃,VD=1/2VDRM, | 100 | A/μs |
| Tj | Operating Junction Temperature |
| -25 to +125 | ℃ |
| Tstg | Storage Temperature |
| -40 to +125 | ℃ |
|
| Mounting Torque(M4) | Recommended Value 1.0-1.4(10-14) | 1.5(15) | N.m |
|
| Mass | Typical value | 2 | g |
Electrical Characteristics
|
Symbol |
Item |
Conditions |
Ratings |
Unit | |
|
IDRM | Reptitive Peak Off-State Current,
max |
VD=VDRM, Single phase, half wave, Tj=125℃ |
5 |
mA | |
|
VTM |
Peak On-State Voltage, max | On-State Current [√ 2 × IT ( RMS )], Inst.
measurement |
1.4 |
V | |
| I + GT1 | 1 |
Gate Trigger Current, max | Tj=25℃,IT=1A,VD=6V | 80 |
mA |
| I -GT1 | 2 | Tj=25℃,IT=1A,VD=6V | 80 | ||
| I + GT3 | 3 |
| - | ||
| I -GT3 | 4 | Tj=25℃,IT=1A,VD=6V | 80 | ||
| V+ GT1 | 1 |
Gate Trigger Voltage, max | Tj=25℃,IT=1A,VD=6V | 3 |
V |
| V-GT1 | 2 | Tj=25℃,IT=1A,VD=6V | 3 | ||
| V+ GT3 | 3 |
| - | ||
| V-GT3 | 4 | Tj=25℃,IT=1A,VD=6V | 3 | ||
| VGD | Non-Trigger Gate Voltage, min | Tj=125℃,VD=1/2VDRM | 0.2 | V | |
|
tgt |
Turn On Time, max. | IT(RMS),IG=100mA,VD=1/2VDRM,Tj =25℃,dIG/dt=1A/μs |
10 |
V | |
|
dv/dt | Critical Rate of Rise on-State
Voltage,min. |
Tj=125℃,VD=2/3VDRM,Exoponential wave. |
300 |
V/μs | |
|
dv/dt]c | Critical Rate of Rise off-State
Voltage at commutation, min |
Tj=125℃,VD=2/3VDRM,[di/dt]c=15A/ms |
200 |
V/μs | |
| IH | Holding Current, typ. | Tj=25℃ | 30 | mA | |
| Rth(j-c) | Thermal Impedance, max | Junction to case | 1.5 | ℃/W | |
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
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