Mr. John chang
Model No.: YZPST-BT138-800E
Brand: YZPST
Place Of Origin: China
IT(RMS): 12A
VDRM/VRRM: 600/800V
VTM: ≤1.6V
Tstg: -40~150℃
Tj: -40~125℃
ITSM: 120A
I2t: 45A2s
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 100000000
Transportation: Ocean,Land,Air
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
BT138 Series 12A Triacs
YZPST-BT138-800E
DESCRIPTION
With low holding and latching current, BT138
Series triacs are especially recommended for
use on middle and small resistance type power
load.
MAIN FEATURES:
| symbol | value | unit |
| IT(RMS) | 12 | A |
| VDRM/VRRM | 600/800 | V |
| VTM | ≤1.6 | V |
ABSOLUTE MAXIMUM RATINGS:
| Parameter | Symbol | Value | Unit |
| Storage junction temperature range | Tstg | -40~150 | ℃ |
| Operating junction temperature range | Tj | -40~125 | ℃ |
| Repetitive peak off-state voltage (Tj=25℃) | VDRM | 600/800 | V |
| Repetitive peak reverse voltage (Tj=25℃) | VRRM | 600/800 | V |
| RMS on-state current | IT(RMS) | 12 | A |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
120 |
A |
| I2t value for fusing (tp=10ms) | I2t | 45 | A2s |
| Critical rate of rise of on-state current (IG=2 × IGT) | Ⅰ- Ⅱ-Ⅲ | 50 | ||
| dI/dt | Ⅳ | 10 | A/ μs | |
| Peak gate current | IGM | 2 | A | |
| Average gate power dissipation | PG(AV) | 0.5 | W | |
| Peak gate power | PGM | 5 | W | |
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
3 Quadrants：
| Parameter | Value | ||||||
| Test Condition | Quadrant | SW | CW | BW | Unit | ||
| IGT | 10 | 35 | 50 | mA | |||
| VGT | VD=12V, RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.3 | V | ||
| VGD | VD=VDRM Tj=125℃ | Ⅰ- Ⅱ-Ⅲ | MIN | 0.2 | V | ||
| IH | IT=100mA | MAX | 10 | 40 | 60 | mA | |
| Ⅰ-Ⅲ | 30 | 50 | 70 | ||||
| IL | IG=1.2IGT | Ⅱ | MAX | 40 | 60 | 80 | mA |
| VD=2/3VDRM Tj=125℃ | |||||||
| dV/dt | Gate open | MIN | 200 | 500 | 1000 | V/ µs | |
4 Quadrants：
| Parameter | Value | |||||||
| Test Condition | Quadrant | D | E | F | G | Unit | ||
| Ⅰ- Ⅱ-Ⅲ | 5 | 10 | 25 | 50 | ||||
| IGT | Ⅳ | 10 | 25 | 70 | 100 | mA | ||
| VGT | VD=12V, RL=33Ω | Ⅰ- Ⅱ-Ⅲ-Ⅳ | MAX | 1.3 | V | |||
| VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ-Ⅳ | MIN | 0.2 | V | |||
| IH | IT=100mA | MAX | 10 | 20 | 40 | 60 | mA | |
PACKAGE MECHANICAL DATA
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
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