Mr. John chang
Model No.: YZPST-SG50AA160
Brand: YZPST
Certification: RoHS
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 1000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: Shanghai
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
Triac YZPST-SG50AA160
TRIAC(ISOLATED TYPE)
SG50AA are isolated molded triacs suitable for wide range of applications like copier, microwave oven, solid state switch, motor control, light control and heater control.● IT(AV) 50A
● High surge capability 330A
● Tab Terminals
|
Symbol |
Item |
|
|
|
Unit |
| SG50AA80 | SG50AA120 | SG50AA160 | |||
| VDRM | Repetitive Peak Off-State Voltage | 800 | 1200 | 1600 | V |
|
Symbol |
Item |
Conditions |
Ratings |
Unit |
| IT(RMS) | R.M.S. On-State Current | Tc=58℃ | 50 | A |
| ITSM | Surge On-State Current | One cycle, 50Hz/60Hz, peak, non-repetitive | 450 | A |
| I2t | I2t | Value for one cycle of surge current | 730 | A2S |
|
PGM |
Peak Gate Power Dissipation |
|
10 |
W |
| PG(AV) | Average Gate Power Dissipation |
| 1 | W |
| IGM | Peak Gate Current |
| 3 | A |
| VGM | Peak Gate Voltage |
| 10 | V |
| di/dt | Critical Rate of Rise of On-State Current | IG=100mA,Tj=25℃,VD=1/2VDRM, | 100 | A/μs |
| Tj | Operating Junction Temperature |
| -25 to +125 | ℃ |
| Tstg | Storage Temperature |
| -40 to +125 | ℃ |
|
| Mounting Torque(M4) | Recommended Value 1.0-1.4(10-14) | 1.5(15) | N.m |
|
| Mass | Typical value | 2 | g |
Electrical Characteristics
|
Symbol |
Item |
Conditions |
Ratings |
Unit | |
|
IDRM | Reptitive Peak Off-State Current,
max |
VD=VDRM, Single phase, half wave, Tj=125℃ |
5 |
mA | |
|
VTM |
Peak On-State Voltage, max | On-State Current [√ 2 × IT ( RMS )], Inst.
measurement |
1.4 |
V | |
| I + GT1 | 1 |
Gate Trigger Current, max | Tj=25℃,IT=1A,VD=6V | 80 |
mA |
| I -GT1 | 2 | Tj=25℃,IT=1A,VD=6V | 80 | ||
| I + GT3 | 3 |
| - | ||
| I -GT3 | 4 | Tj=25℃,IT=1A,VD=6V | 80 | ||
| V+ GT1 | 1 |
Gate Trigger Voltage, max | Tj=25℃,IT=1A,VD=6V | 3 |
V |
| V-GT1 | 2 | Tj=25℃,IT=1A,VD=6V | 3 | ||
| V+ GT3 | 3 |
| - | ||
| V-GT3 | 4 | Tj=25℃,IT=1A,VD=6V | 3 | ||
| VGD | Non-Trigger Gate Voltage, min | Tj=125℃,VD=1/2VDRM | 0.2 | V | |
|
tgt |
Turn On Time, max. | IT(RMS),IG=100mA,VD=1/2VDRM,Tj =25℃,dIG/dt=1A/μs |
10 |
V | |
|
dv/dt | Critical Rate of Rise on-State
Voltage,min. |
Tj=125℃,VD=2/3VDRM,Exoponential wave. |
300 |
V/μs | |
|
dv/dt]c | Critical Rate of Rise off-State
Voltage at commutation, min |
Tj=125℃,VD=2/3VDRM,[di/dt]c=15A/ms |
200 |
V/μs | |
| IH | Holding Current, typ. | Tj=25℃ | 30 | mA | |
| Rth(j-c) | Thermal Impedance, max | Junction to case | 1.5 | ℃/W | |
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
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