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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > 800V BTA204X-800B TO-220F triac have good performance at reliability
  • 800V BTA204X-800B TO-220F triac have good performance at reliability
  • 800V BTA204X-800B TO-220F triac have good performance at reliability
  • 800V BTA204X-800B TO-220F triac have good performance at reliability
  • 800V BTA204X-800B TO-220F triac have good performance at reliability
  • 800V BTA204X-800B TO-220F triac have good performance at reliability

800V BTA204X-800B TO-220F triac have good performance at reliability

  • $0.08
    10000-49999
    Piece/Pieces
  • $0.06
    ≥50000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-BTA204X-800B

BrandYZPST

Place Of OriginChina

IT(RMS)4A

VDRM800V

VRRM800V

ITSM25A

I2t3.1A2S

IGM2A

VGM5V

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. braid

Productivity10000000000

TransportationOcean,Land,Express,Others

Place of OriginCHINA

Supply Ability10000000000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. braid

YZPST-BTA204X-800B

800V BTA204X-800B TO-220F triac have good performance at reliability

Package

TO-220F

BTA204X TO-220F

Main    Feature( (Tj=25℃)

Symbol

Value

Unit

IT(RMS)

4

A

VDRM   / VRRM

≥800

V

ITSM

25

A

Absolute ratings (Limiting Values)

Symbol

Parameter

Value

Unit

IT (RMS)

Rms on-state current(full sine wave)

4

A

 ITSM

Non- repetitive Peak on-state

Current (Tj=25,tp=20ms)

 25

 A

I2t

I2t    for fusing(tp=10ms)

3.1

A2S

IGM

Peak gate current

2

A

VGM

Peak gate voltage

5

V

PGM

Peak gate power

5

W

PG(AV)

Average gate power

0.5

W

 di/dt

Repetitive rate of rise of on-state current after triggering

(IT=6A,IG=0.2A,dlG/dt=0.2A/us)

 100

 A/μs

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+110

Thermal Resistances

Symbol

Parameter

Condition

Min

Type

Max

Unit

Rth j-mb

Thermal Resistance, Junction to mb

One cycle Half cycle

——

——

——

——

3.0

3.7

K/W

K/W

 Rth j-a

Thermal

Resisatance,Junction to ambient

 in free air

 ——

 60

 ——

 K/W

Electrical characteristics (Tj=25℃ unless otherwise stated)

Symbol

Conditions

Min

Type

Max

Unit

 

BT204-

 

 

 

 

 

VD=12V    IT=0.1A T2+ G+

 

 

 

 

T2+ G-

 

35

mA

IGT

T2- G-

——

35

mA

 

 

——

35

mA

 

 

——

 

 

IH

VD=12V IGT=0.1A

 

2

12

mA

IL

IG=2×IGT

Ⅰ-Ⅲ

 

 

6

mA

 

 

9

VTM

IT=8A

——

1.25

1.7

V

IDRM

V DRM=600V

 

 

10

μA

IRRM

VRRM=600V

 

 

10

μA

 

VD=12V    IT=0.1A

 

0.7

1.65

V

VGT

VD=400V IT=0.1A

0.25

0.4

1.5

V

 

Tj=125℃

 

 

 

 

 

VD=VDRM(MAX)

 

 

 

mA

ID

Tj=125℃

——

0.1

0.5

Dynamic characteristics      (Tj=25℃ unless otherwise stated)

Symbol

Conditions

Min

Type

Max

Unit

 dVD/dt

VDM=67%VDmMAX

Tj=125

 30



 V/μs

 tgt

ITm=12A    VD=VDRMMAX

IG=0.1A dlG/dt=5A/ms


 2

 ——

μs

PACKAGE MECHANICAL DATA

TO-220F

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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