Mr. John chang
Model No.: YZPST-BTA40-800B TG40C80
Brand: YZPST
Place Of Origin: China
IT RMS: 40A
ITSM: 400 A
I2t: 880A2S
PGM: 10W
PG AV: 1W
IGM: 8A
VGM: 10V
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. braid
Productivity: 100000000
Transportation: Ocean,Land,Express,Others
Place of Origin: CHINA
Supply Ability: 1000000000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
TRIAC (ISOLATED TYPE)
YZPST-BTA40-800B TG40C80
TG40C/E/D are isolated molded triacs
suitable for wide range of applications like
copier, microwave oven, solid state switch,
motor control, light control and heater
control.
IT AV 40A
High surge capability 400A
Isolated Nounting AC2500V
Tab Terminals
Maximum Ratings
| Symbol | Item | Conditions | Ratings | Unit |
| IT RMS | R.M.S. On-State Current | Tc | 40 | A |
| ITSM | Surge On-State Current | One cycle, 50Hz/, peak, non-repetitive | 400 | A |
| I2t | I2t | Value for one cycle of surge current | 880 | A2S |
| PGM | Peak Gate Power Dissipation |
| 10 | W |
| PG AV | Average Gate Power Dissipation |
| 1 | W |
| IGM | Peak Gate Current |
| 8 | A |
| VGM | Peak Gate Voltage |
| 10 | V |
| di/dt | Critical Rate of Rise of On-State Current | IG=100mA,Tj=25 VD=1/2VDRM dIG/dt=1A/μS | 50 | A/μS |
| Tj | Operating Junction Temperature |
| -25～+125 | ℃ |
| Tstg | Storage Temperature |
| -40～+125 | ℃ |
| VISO | Isolation Breakdown Voltage R.M.S. | A.C.1 minute | 2500 | V |
|
| Mounting Torque M4 | Recommended Value 1.0 ～1.4（10～14） | 14 | kgf.CM |
Maximum Ratings
Tj=25 unless otherwise specified
| Symbol | Item | Ratings | Unit | |||
| TG40C60 | TG40C80 | TG40C100 | TG40C12 | V | ||
| VDRM | Repetitive Peak Off-State Voltage | 600 | 800 | 1000 | 1200 | V |
Electrical Characteristics
| Symbol | Item | Conditions | Ratings | Unit | |
| IDRM | Reptitive Peak Off-State Current, max | VD=VDRM, Single phase, half wave, Tj=125℃ | 5 | mA | |
| VTM | Peak On-State Voltage, max | On-State Current On-State Current √2X IT (RMS),Inst. measurement | 1.55 | V | |
| I GT1 + | 1 | Gate Trigger Current, max | Tj =25℃, IT=1A, VD=6V | 50 | mA |
| I GT1 - | 2 | Tj =25℃, IT=1A, VD=6V | 50 | mA | |
| I GT3 + | 3 |
| - | mA | |
| I GT3 + | 4 | Tj =25℃, IT=1A, VD=6V | 50 | mA | |
| V GT1+ | 1 | Gate Trigger Voltage, max | Tj =25℃, IT=1A, VD=6V | 3 | V |
| V GT1- | 2 | Tj =25℃, IT=1A, VD=6V | 3 | V | |
| V GT3+ | 3 |
| - | V | |
| V GT3- | 4 | Tj =25℃, IT=1A, VD=6V | 3 |
| |
| VGD | Non-Trigger Gate Voltage, min | Tj =25℃, VD=1/2VRRM | 0.2 | V | |
| tgt | Turn On Time, max. | IT=(RMS),IG=100mA,VD=1/2VDRM,Tj=25℃,dIG/dt=1A/μS | 10 | V | |
| dv/dt | Critical Rate of Rise on-State Voltage,min. | Tj=25℃,VD=2/3VDRM Exoponential wave. | 500 | V/μS | |
| (dv/dt) c | Critical Rate of Rise off-State Voltage at commutation, min | Tj=25℃,VD=2/3VDRM di/dtc=15A/μS | 5 | V/μS | |
| IH | Holding Current, typ. | Tj =25℃ | 60 | mA | |
| Rth(j-c) | Thermal Impedance, max | Junction to case | 0.9 | ℃/W | |
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
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