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Home > Products > Semiconductor Plastic Package > Bi Directions Thyristor (Triac) > N-Channel Enhancement Mode 1700V Silicon Carbide Power MOSFET

N-Channel Enhancement Mode 1700V Silicon Carbide Power MOSFET

  • $4.15
    200-999
    Piece/Pieces
  • $3.98
    ≥1000
    Piece/Pieces
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  • Product Description
Overview
Product Attributes

Model No.YZPST-1A01K170K

BrandYZPST

Place Of OriginChina

VDSmax1700V

VGSmax-10/+25V

VGSop-5/+20V

ID5.0A 3/5A

LD(pulse)6.0A

PD69W

Supply Ability & Additional Information

Packaging1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

Productivity100000

TransportationOcean,Air

Place of OriginChina

Supply Ability10000

CertificateISO9001-2008,ROHS

HS Code85413000

PortSHANGHAI

Payment TypeL/C,T/T,Paypal

IncotermFOB,CFR,CIF

Packaging & Delivery
Selling Units:
Piece/Pieces
Package Type:
1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging

YZPST-1A01K170K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode


VDS = 1700 V

RDs(on) = 1.0Q 

lDS@25°C = 5.0 A


Features

High-voltage Capacitive
High Blocking Voltage with low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Ultra-low Drain-gate capacitance
Avalance Ruggedness
Silicon Carbide Power MOSFET


Benefits

Higher System Efficiency
Reduced Cooling Requirements
Increased System Reliability
Increased System Switching Frequency

Applications
Auxiliary Power Supplies
Switch Mode Power Supplies

Part Number Package
1A01K170K TO-247-3
Maximum Ratings (Tc=25°C unless otherwise specified)

YZPST-1A01K170K-2

Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)

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