Mr. John chang
Model No.: YZPST-QM3N150C
Brand: YZPST
Place Of Origin: China
Vdss: 1500V
ID Continuous (Tc = 25 °C ): 3A
ID Continuous ( Tc = 100 °C ): 1.8A
Idm: 12A
EAS: 225mJ
Dv/dt: 5V/ns
Packaging: 1. Anti-electrostatic packaging 2. Carton box 3. Plastic protective packaging
Productivity: 1000000000
Transportation: Ocean,Air
Place of Origin: China
Supply Ability: 10000000000
Certificate: ISO9001-2008,ROHS
HS Code: 85413000
Port: SHANGHAI
Payment Type: L/C,T/T,Paypal
Incoterm: FOB,CFR,CIF
1500V N-Channel MOSFET
YZPST-QM3N150C
General Description
This Power MOSFET is produced using advanced
self- aligned planar technology. This advanced
technology has been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices can be used in various power switching
circuit for system miniaturization and higher efficiency.
Features
3A, 1500V, RD5(on)typ. = 50@VGS= 10 V ld=1.5A
Low gate charge (typical 37nC)
Low reverse transfer capacitance (typical2.8pf)
Fast switching
100% avalanche tested
Absolute Maximum Ratings Tc=25 Cunles otherwise noted
| Symbol | Parameter | YZPST-QM3N150C | Units | |
| Voss | Drain-Source Voltage | 1500 | V | |
| lo | Drain Current | Continuous(Tc=25℃) | 3 | A |
| Continuous(Tc=100℃) | 1.8 | A | ||
| loM | Drain Current - Pulsed (Note 1) | 12 | A | |
| VGss | Gate-Source Voltage | ±30 | V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 225 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5 | V/ns | |
| Po | Power Dissipation(Tc=25℃) | 32 | W | |
| T,Tsts | Operating anc Storage Temperature Range | -55 to+150 | ℃ | |
| Tt | Maximum lead temperature for soldering purposes 1/8" frome case for 5 seconds | 300 | ℃ | |
TO-3PH Package lInformation
Product Categories : Semiconductor Plastic Package > Bi Directions Thyristor (Triac)
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